The new JEOL JBX-8100FS series spot beam lithography system is designed for higher throughput and lower operating costs. The JBX-8100FS writes ultrafine patterns at a faster rate of speed while minimizing idle time, especially during the exposure process, thus increasing throughput. This new, high precision compact e-beam tool is suitable for a wide range of applications from research to production, while its small footprint and low power consumption reduce cost of ownership.

Main Features

• Small footprint
  The area required for the standard system is 4.9 m (W) x 3.7 m (D) x 2.6 m (H), much smaller than the conventional systems.
• Low power consumption
  Power needed for normal operation is approximately 3 kVA, reduced to 1/3 of the conventional systems.
• High throughput
  The system has two exposure modes, high resolution and high throughput modes, supporting different types of patterning from ultra fine processing to small to mid size production. It has minimized the idle time during exposure while increasing the maximum scanning speed by 1.25 to 2.5 times to 125 MHz (the world’s highest level) for high speed writing.
• Version
  The JBX-8100FS is available in 2 versions: G1 (entry model) and G2 (full option model). Optional accessories can be added to the G1 model as needed.
• New Functions
  An optional optical microscope is available to enable examination of patterns on the sample without exposing resist to light. A signal tower is provided as standard for visual monitoring of system operation.
• Laser positioning resolution
  Stage positions are measured and controlled in 0.6 nm steps as standard, and in 0.15 nm steps with an optional upgrade.
• System control
  Versatile Linux® operating system combined with a new graphic user interface provides ease in operation. The data preparation program supports both Linux® and Windows®.

The JBX-8100FS is an electron-beam lithography system designed to write nanometer to submicron sized patterns using a spot beam.

Write Modes Specifications

Note: High Throughput will be almost exclusively used, contact Bill Rowe if you think you need HR mode.

Features

• ZrO/W emitter 
• 4-stage electron-beam focusing system
• Accelerating voltage: 100 kV
• Writing: Vector scan (within a subfield) and Step-and-repeat (electronically between subfields and physically between fields).
• Beam scanning speed: ≤125 MHz
• Scan speed modulation: 256 rank / 0.05 nsec resolution
• Mainfield/Positioning DAC: 20-bit
• Subfield/Scanning DAC: 14-bit
• Focus range: ±100 μm
• Max wafer size: 200 mm
• Max writing area: 150 mm x 150 mm
• Movable area: 190 mm x 170 mm
• Stage positioning resolution: λ/1024 (~0.6 nm)
• Beam current stability: 0.2% pp/hr
• Beam position stability: ≤60 nm pp/hr (HT) / ≤10 nm pp/hr (HR)
• Substrate thickness compatibility: 225 μm to 1.3 mm
• Deflection amplitude correction and objective-lens focus correction, using the substrate height detector
• Smallest features size: 4.2 nm (demonstrated by JEOL in Development of the JBX-8100FS Electron Beam Lithography System).

The JBX-8100FS is mounted on a TMC Quiet Island with STACIS III antivibration supports. Transmission is minimized at high frequencies, and unlike older anti-vibration supports, is reduced at low (<10 Hz) frequencies as well.

JBX-8100FS Performance Test Report - Purdue

Training for JBX-8100FS - Purdue

STACIS III Anti-vibration Platform for JBX-8100FS IOC report - Purdue

Beam Diameter of JBX-8100FS - Purdue

BEAMER Manual

JEOL

JEOL USA Semiconductor Equipment Documents - Electron Beam Lithography

Yukinori Aida, "Development of the JBX-8100FS Electron Beam Lithography System", JEOL News 53(1), 59 (2018).

(Web Version)

Georgia Tech

100 kV Electron Beam Lithography System: JBX-9300FS

"JEOL JBX-9300FS Electron Beam Lithography System Training", Georgia Tech

Yale

YINQE EBL - Manuals and Documentation

YINQE EBL - Software Downloads

YINQE EBL - Electron-Beam Lithography Training

University of Washington

Run Time Estimator

Schedule File Compiling

Cornell

JEOL 6300

JEOL 9500

JEOL Alignment Marks

Shot Pitch and Write Time Calculator - XLS

University of Michigan

JEOL JBX-6300FS

University of Minnesota

Vistec EBPG5000 (with good process resources)

Electron Properties

Accelerating Voltage Calculator

Properties of Electrons

Electron Beam properties

"Quality control of JEOL JBX-9500FSZ e-beam lithography system in a multi-user laboratory", T. Greibe et al, Microelectronic Engineering 155, 25-28 (2016).

"5-nm-Order Electron-Beam Lithography for Nanodevice Fabrication," K. Yamazaki and H. Namatsu, japanese Journal of Applied Physics 43, 3767 (2004).
This paper explains why the measured beam size on the knife edge mark (AE mark) is so much larger than the actual beam size. It further discusses some ultrasmall patterns in HSQ

Contact Justin Wirth if you are interested in partnering with BNC to evaluate these resists and develop standard processes of broad usefulness to the BNC research community. 

AZ nLOF 2000

AllResist

AR-P 6200 and AR-N 7520 are of particular interest:

FAQ: E-Beam Resists

AR-P 6200:

Nanostructures

Developer Comparison

High Contrast Developer