Versions Compared

Old Version 26

changes.mady.by.user Wirth, Justin C

Saved on

compared with

New Version 27

changes.mady.by.user Wirth, Justin C

Saved on

Key

  • This line was added.
  • This line was removed.
  • Formatting was changed.


Page Properties
idFunctionality

Insert excerpt
Problem Reporting Guide
Problem Reporting Guide
nopaneltrue

StatusUPDOWN
Issue Date and Description

Gun trip

Estimated Fix Date and Comment

Bill Rowe will inspect on Tuesday

Responding Staff



/wiki/spaces/BNCWiki/pages/6235752

  

Page Properties
idInfo


iLab NameRaith eLine E-Beam Writer
iLab KioskBRK Lithography Core
FICJoerg Appenzeller
OwnerBill Rowe
LocationBRK 1239
Max. Wafer4"/100 mm




Table of Content Zone
locationtop
styledisc

Table of Contents
outlinetrue
indent25px
stylenone


Overview

General Description

The Raith e_LiNE is a 100eV to 30keV system using a Schottky TFE filament with a 20MHz pattern processor. It is ideal for nanotech research in carbon nanotubes and nanowires.

Specifications

  • Stage travel: 100 mm x 100 mm.
  • Maximum substrate size: 100 mm x 100 mm.
  • Minimum feature size: <20 nm.
  • Minimum beam size: <2 nm.
  • Writing current: 5 pA - 20 nA.

Technology Overview 



Sample Requirements and Preparation



Standard Operating Procedure

View file
nameRaith Purdue.pdf
pageRaith eLine E-Beam Writer - Internal Resources
height250


Questions & Troubleshooting


Process Library

References

Raith eline instructions_ND