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| Problem Reporting Guide |
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| Problem Reporting Guide |
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Status | UP | Issue Date and Description | | Estimated Fix Date and Comment | | Responding Staff | |
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Overview
General Description
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The new JEOL JBX-8100FS series spot beam lithography system is designed for higher throughput and lower operating costs. The JBX-8100FS writes ultrafine patterns at a faster rate of speed while minimizing idle time, especially during the exposure process, thus increasing throughput. This new, high precision compact e-beam tool is suitable for a wide range of applications from research to production, while its small footprint and low power consumption reduce cost of ownership. Main FeaturesSmall footprint The area required for the standard system is 4.9 m (W) x 3.7 m (D) x 2.6 m (H), much smaller than the conventional systems. Low power consumption Power needed for normal operation is approximately 3 kVA, reduced to 1/3 of the conventional systems. High throughput The system has two exposure modes, high resolution and high throughput modes, supporting different types of patterning from ultra fine processing to small to mid size production. It has minimized the idle time during exposure while increasing the maximum scanning speed by 1.25 to 2.5 times to 125 MHz (the world’s highest level) for high speed writing. Version The JBX-8100FS is available in 2 versions: G1 (entry model) and G2 (full option model). Optional accessories can be added to the G1 model as needed. New Functions An optional optical microscope is available to enable examination of patterns on the sample without exposing resist to light. A signal tower is provided as standard for visual monitoring of system operation. Laser positioning resolution Stage positions are measured and controlled in 0.6 nm steps as standard, and in 0.15 nm steps with an optional upgrade. System control Versatile Linux® operating system combined with a new graphic user interface provides ease in operation. The data preparation program supports both Linux® and Windows®.
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Specifications
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The JBX-8100FS is an electron-beam lithography system designed to write nanometer to submicron sized patterns using a spot beam. Write Modes SpecificationsNote: High Throughput will be almost exclusively used, contact |
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Justin Wirth if you think you need HR mode.
| High Throughput (HT/4th Lens/EOS 3) | High Resolution (HR/5th Lens/EOS 6) |
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Max. Main Field Size | 1000 μm x 1000 μm | 100 μm x 100 μm |
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Max. Sub Field Size | 8 μm x 8 μm | 0.8 μm x 0.8 μm |
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Min. Beam Step Size | 0.5 nm | 0.05 nm |
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Min. Shape Placement Step | 1 nm | 0.1 nm |
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Overlay Accuracy | ≤±20 nm | ≤±9 nm |
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Field Stitching Accuracy | ≤±20 nm | ≤±9 nm |
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Min. Beam Diameter | 5.1 nm | 1.8 nm |
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Min. Line Width (Field Center) | <12 nm | <8 nm |
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Available Currents (at BNC) | 2, 10, 30, 100 nA ( |
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60 nA available as a test file) | 0.5 nA |
FeaturesZrO/W emitter 4-stage electron-beam focusing system Accelerating voltage: 100 kV Writing: Vector scan (within a subfield) and Step-and-repeat (electronically between subfields and physically between fields). Beam scanning speed: ≤125 MHz Scan speed modulation: 256 rank / 0.05 nsec resolution Mainfield/Positioning DAC: 20-bit Subfield/Scanning DAC: 14-bit Focus range: ±100 μm Max wafer size: 200 mm Max writing area: 150 mm x 150 mm Movable area: 190 mm x 170 mm Stage positioning resolution: λ/1024 (~0.6 nm) Beam current stability: 0.2% pp/hr Beam position stability: ≤60 nm pp/hr (HT) / ≤10 nm pp/hr (HR) Substrate thickness compatibility: 225 μm to 1.3 mm Deflection amplitude correction and objective-lens focus correction, using the substrate height detector Smallest features size: 4.2 nm (demonstrated by JEOL in Development of the JBX-8100FS Electron Beam Lithography System).
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| JEOL JBX-8100FS - Internal Resources - Detailed Specifications |
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| JEOL JBX-8100FS - Internal Resources - Detailed Specifications |
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The JBX-8100FS is mounted on a TMC Quiet Island with STACIS III antivibration supports. Transmission is minimized at high frequencies, and unlike older anti-vibration supports, is reduced at low (<10 Hz) frequencies as well. |
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Sample Requirements and Preparation
Samples need to be free of outgassing contaminants, and PR must be properly baked to avoid contamination of the column
Standard Operating Procedure
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Login to Confluence to view the SOP, or email jcwirth@purdue.edu if you are external to Purdue and interested:
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SOP - JEOL JBX-8100FS E-Beam Writer
Process Control Information
Process Control Context
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title | Process Control Information Context |
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The JEOL system is calibrated by staff every 7 - 21 days, with separate calibration necessary for each condition file (current). These are typically stable for 1-3 weeks. As part of this process, column shift and tilt is adjusted (similar to an SEM), current is measured (and adjusted via the column zoom lenses, if necessary), wobble is checked and minimized (via the objective aperture, again similar to an SEM), focus and astigmatism is adjusted (via the objective lens strength and stigmator correction values), and the DAILYCAL file is run to ensure everything passes. Data is shown for the current FEG and previous FEG. These are replaced approximately every 2 years. Some particularly relevant measurements are shown below: Current: specified as nominal values. As part of the exposure, the machine will measure the current (by default, every 20 minutes) and automatically adjust the exposure dose based on this. As such, drifts in current will not directly affect the writing quality, but may affect user experience on the system. Calibration measured beam size: The beam size in the X and Y directions measured by the system on a “clean” spot of the AE mark used by staff for calibration. This will always be larger than the true size of the beam, and is only useful in the context explained here. Astigmatism:
High currents (>30 nA) have their focus and astigmatism set manually by staff rather than through the built-in calibration routines on the system. Similarly, the built-in measurement programs do not give reliable values for beam size or astigmatism. As a result, only beam current (which is measured similarly and reliably compared to low currents) is posted here. |
Process Control Charts
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width | 600 |
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id | 2 nA Current |
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title | 2 nA Current |
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height | 371 |
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src | https://docs.google.com/spreadsheets/d/e/2PACX-1vREQkrVz2q4O4NPDSSeuiE-a8JCgaRPsZN0q--Vn4UVERm3JqARlcD60wbK2W68BtupIYdXtFK4q9dh/pubchart?oid=1940629618&format=interactive |
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width | 600 |
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id | 2 nA Size |
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title | 2 nA Beam Size |
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height | 371 |
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src | https://docs.google.com/spreadsheets/d/e/2PACX-1vREQkrVz2q4O4NPDSSeuiE-a8JCgaRPsZN0q--Vn4UVERm3JqARlcD60wbK2W68BtupIYdXtFK4q9dh/pubchart?oid=1807216079&format=interactive |
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width | 600 |
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id | 2 nA Astigmatism |
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title | 2 nA Astigmatism |
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height | 371 |
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src | https://docs.google.com/spreadsheets/d/e/2PACX-1vREQkrVz2q4O4NPDSSeuiE-a8JCgaRPsZN0q--Vn4UVERm3JqARlcD60wbK2W68BtupIYdXtFK4q9dh/pubchart?oid=1028779361&format=interactive |
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width | 600 |
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id | 10 nA Current |
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title | 10 nA Current |
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height | 371 |
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src | https://docs.google.com/spreadsheets/d/e/2PACX-1vREQkrVz2q4O4NPDSSeuiE-a8JCgaRPsZN0q--Vn4UVERm3JqARlcD60wbK2W68BtupIYdXtFK4q9dh/pubchart?oid=1320668119&format=interactive |
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width | 600 |
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id | 10 nA Size |
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title | 10 nA Beam Size |
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height | 371 |
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src | https://docs.google.com/spreadsheets/d/e/2PACX-1vREQkrVz2q4O4NPDSSeuiE-a8JCgaRPsZN0q--Vn4UVERm3JqARlcD60wbK2W68BtupIYdXtFK4q9dh/pubchart?oid=969342617&format=interactive |
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width | 600 |
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id | 10 nA Astigmatism |
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title | 10 nA Astigmatism |
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height | 371 |
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src | https://docs.google.com/spreadsheets/d/e/2PACX-1vREQkrVz2q4O4NPDSSeuiE-a8JCgaRPsZN0q--Vn4UVERm3JqARlcD60wbK2W68BtupIYdXtFK4q9dh/pubchart?oid=1398796541&format=interactive |
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width | 600 |
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id | 30 nA Current |
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title | 30 nA Current |
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height | 371 |
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src | https://docs.google.com/spreadsheets/d/e/2PACX-1vREQkrVz2q4O4NPDSSeuiE-a8JCgaRPsZN0q--Vn4UVERm3JqARlcD60wbK2W68BtupIYdXtFK4q9dh/pubchart?oid=2043692104&format=interactive |
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width | 600 |
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id | 30 nA Size |
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title | 30 nA Beam Size |
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src | https://docs.google.com/spreadsheets/d/e/2PACX-1vREQkrVz2q4O4NPDSSeuiE-a8JCgaRPsZN0q--Vn4UVERm3JqARlcD60wbK2W68BtupIYdXtFK4q9dh/pubchart?oid=417147565&format=interactive |
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width | 600 |
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id | 30 nA Astigmatism |
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title | 30 nA Astigmatism |
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height | 371 |
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title | High Current - 60 nA and 100 nA |
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src | https://docs.google.com/spreadsheets/d/e/2PACX-1vREQkrVz2q4O4NPDSSeuiE-a8JCgaRPsZN0q--Vn4UVERm3JqARlcD60wbK2W68BtupIYdXtFK4q9dh/pubchart?oid=858507442&format=interactive |
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width | 600 |
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id | 60 nA Current |
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title | 60 nA Current |
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height | 371 |
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src | https://docs.google.com/spreadsheets/d/e/2PACX-1vREQkrVz2q4O4NPDSSeuiE-a8JCgaRPsZN0q--Vn4UVERm3JqARlcD60wbK2W68BtupIYdXtFK4q9dh/pubchart?oid=1239600865&format=interactive |
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width | 600 |
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id | 100 nA Current |
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title | 100 nA Current |
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height | 371 |
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Process Library
Currently empty, please contribute your processes here.
8100calculator.xlsx
Use this Excel file to assist with picking currents, shot pitches, ensuring you're within the clock headroom (<125 MHz, >8ns), to roughly estimate your write time based on the current/dose/pattern area, and track alignment mark locations.
8100calculator.xlsx
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| eLog - JEOL JBX-8100FS E-Beam Writer |
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| eLog - JEOL JBX-8100FS E-Beam Writer |
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References
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BNC Staff Presentations - Internal Resources
J. C. Wirth, "Introduction to the JEOL JBX-8100FS", BNC Faculty Seminar, 2/08/2018 (Updated 10/25/2018).
Purdue's JBX-8100FS, from JEOL - Internal Resources
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JBX-8100FS Performance Test Report - Purdue
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STACIS III Anti-vibration Platform for JBX-8100FS IOC report - Purdue
Beam Diameter of JBX-8100FS - Purdue
BEAMER Manual
JEOL Manuals - Internal Resources
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General References
Relevant Literature
Partnership Opportunities - Alternate EBL Resists/Processes
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Contact Justin Wirth if you are interested in partnering with BNC to evaluate these resists and develop standard processes of broad usefulness to the BNC research community. AZ nLOF 2000 AllResist AR-P 6200 and AR-N 7520 are of particular interest: FAQ: E-Beam Resists AR-P 6200: Nanostructures Developer Comparison High Contrast Developer |
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