iLab Name: Hitachi S-4800 Field Emission SEM
iLab Kiosk: Purdue Electron Microscopy Facility
FIC: Rosa Diaz
Owner: Alejandro Ramirez
Location: BRK 1235
Maximum Wafer Size: 4"/100 mm
Overview
General Description
The S-4800 Cold Field Emission SEM combines the outstanding high-resolution performance capabilities to offer superb resolution of ~ 2.0 nm at 30 kV. The equipment is equipped with a EDX detector for the detection of chemical elements on your sample at higher voltages.
Specifications
- Accelerating voltages are from 500 V to 30 kV
- Resolution ~ 2.0 nm at 30 kV
- A choice of specimen stage: 4", 2" and 1" wafer and cross section
Technology Overview
Hitachi S-4800 is an electron beam microscope, that accelerates an electron beam in a vacuum environment to interact electrons with the sample of interest.
Sample Requirements and Preparation
Samples should be conductive to maximize sample imaging. With conductive samples features of 10nm can be observed with 5kV. Nonconductive samples can still be imaged, but not small features, limiting smallest resolutions to hundreds of nm, even microns, at low beam voltages (1-5kV). Non-conductive samples can become conductive if they are coated with Carbon, Au-Pd, or Silver paint.
Standard Operating Procedure
Questions & Troubleshooting
Any questions? Please write them down here or contact the Electron Microscopy Staff
References
- Inkson, B. J. "Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) for materials characterization." Materials characterization using nondestructive evaluation (NDE) methods. Woodhead Publishing, 2016. 17-43.
- Sharma, Surender Kumar, et al., eds. Handbook of Materials Characterization. Springer International Publishing, 2018.
- Reimer, Ludwig. Scanning electron microscopy: physics of image formation and microanalysis. Vol. 45. Springer, 2013.