/
Glovebox-Arradiance GEMStar ALD

Glovebox-Arradiance GEMStar ALD

iLab Name

Glovebox-Arradiance GEMStar ALD

iLab Kiosk

https://purdue.ilab.agilent.com/service_centers/4164/equipment_kiosk/dashboard

FIC

Peide Ye

Owner

Mihailo Rayko Bradash, Anh Ho

Location

BRK 2100 G-bay

Max. Wafer

200 mm

Info Links

SOP | Internal | Staff

image-20260114-163826.png
Arradiance GEMStar ALDs integrated Glovebox system

Overview

General Description

Arradiance GEMStar XT platforms integrated with a glovebox feature one thermal ALD and four plasma-enhanced ALD systems, each equipped with advanced capabilities tailored to specific materials.

This is an example of a tip

This is an example of a tool warning

Specifications

The Arradiance GEMStar XT™ Thermal / Plasma‑Ready system in the glovebox is a compact, configurable ALD platform designed for wafers up to 200 mm and small pieces. Key capabilities:

  • The thermal ALD system is designated for terminal high-k dielectric oxide deposition.

  • The four plasma ALD systems are configured for nitride, p-type oxide, wurtzite oxide, and terminal higher-k dielectric materials.

  • Temperature

    • Chamber and standard door: up to 300 °C (touch‑safe exterior by design).

    • Manifolds (precursor/gas lines): up to 200 °C.

    • Optional heated platen (if installed): up to 450 °C (chamber recommended ≤ 250 °C when platen > 300 °C).

  • Gas and flow

    • Carrier / purge gas: N₂ or Ar, up to 200 sccm via MFC.

    • CDA (clean dry air) at ~80 psi is used to actuate pneumatic valves.

    • Auxiliary gases (for plasma‑ready or O₃, etc.) supplied via ¼" VCR connections at 5–20 psi.

  • Process modes

    • Thermal ALD (this manual covers XT‑S/XT‑D thermal and plasma‑ready configurations).

    • Selectable flow‑through or exposure mode of deposition.

    • Integrated Pulsed Vapor Push (PVP™) for ultra‑low‑vapor‑pressure precursors.

  • Control & safety

    • GEMFlow™ software on a dedicated Windows® laptop:

      • Full control over heaters, MFCs, ALD valves, recipes, and logging.

      • Built‑in leak‑back test, pressure monitoring, and status logs.

    • Watchdog protection and EMO (Emergency Machine Off) interface:

      • EMO opens a relay that removes AC power to heaters and 24 V to normally‑closed ALD and isolation valves.

    • Temperature‑limit safety:

      • Chamber over‑temperature cut‑off (limit switch trips around 325 °C, cuts chamber heater power).

      • Software‑enforced vent only below a configurable “Maximum Vent Temp” (Arradiance recommends ≤ 75 °C, and never above 125 °C).

Technology Overview

 ALD is a thin-film deposition technique utilizing sequential, self-limiting surface chemical reactions. Each ALD cycle consists of at least two half-cycles (but can be more complex), containing a precursor dose step and a co-reactant exposure step, separated by purge or pump steps. Ideally, the same amount of material is deposited in each cycle due to the self-limiting nature of the reactions of the precursor and co-reactant with the surface groups on the substrate. By carrying out a certain number of ALD cycles, the targeted film thickness can be obtained.

image-20260114-193633.png
Schematic illustration of a typical ALD cycle consisting of two half-cycles
image-20260114-193841.png

Sample Requirements and Preparation

Sample Specification

  • Clean, vacuum-compatible non-outgassing substrates and film stacks. The backside must be clean and free of any metal or photoresist to prevent contamination of the sample carrier.  Please check with Professor Peide Ye or a staff engineer for the compatibility of your sample.

  • Maximum sample size: Small pieces up to a full 200 mm diameter wafer.  Approximately 6mm of vertical clearance when inserting the sample carrier will accommodate thick non-traditional samples.

  • Chamber / door O‑ring lifetime is degraded quickly > 250 °C. Avoid running the door above 250 °C for extended times, especially if you are venting frequently.

  • For glovebox configuration, all samples must be compatible with:

    • Reduced oxygen/moisture environment.

    • Shared ALD manifold and vacuum lines (no strong outgassing, corrosive, or uncontrolled polymerizing species without prior approval)

 

Standard Operating Procedure

Standard Operating Procedure (Thermal ALD Operation – GEMStar XT)

Important: This summary does not replace the manufacturer manual. All new users must read the Arradiance manual and complete Birck training before independent operation.

Loading and Unloading Samples

  1. Vent sequence:

    • Click “Vent” on the main console.

    • Software will:

      • Set manifold MFC to 10 sccm.

      • Turn OFF chamber and door heaters and ramp them to the configured safe vent temperature (default ~75 °C, never >125 °C).

      • Once below safe vent temp, close EXPO valve and increase MFC to 200 sccm for venting.

      • Enforce an 8 min default delay to reach atmospheric pressure (adjustable under Advanced → Vent Press. Time).

  2. Door interlock:

    • Door will not open until door temperature > 70 °C and chamber is vented.

    • Never force the door; over‑tightening or prying will damage the O‑ring.

  3. Open the clamp, gently open the door, and load the sample:

    • Place wafers or pieces on the end effector or tray (respect the 6 mm height clearance).

    • For thicker or unusual substrates, lab staff may remove/replace the end effector per maintenance procedure.

  4. Close door and secure clamp finger‑tight.

  5. Click “Pump” to:

    • Set MFC to 10 sccm (5 sccm if soft pump is enabled).

    • Open EXPO valve; pump down until pressure crosses the Nominal Threshold (typically 1500–2500 mTorr).

    • When successful, “Vacuum Ready” indicator is green; if only yellow, investigate gauge or leak issues before running recipes.

7. Running a Standard Thermal Al₂O₃ Recipe (TMA/H₂O)

Arradiance’s factory qualification recipe (example):

  • Reactor + door: 175 °C.

  • Metalorganic manifold (TMA): 110 °C.

  • Oxidizer manifold (H₂O): 130 °C.

  • Carrier flow: 10 sccm.

  • Dwell after heating: 5 min.

  • Cycles: 300.

  • Sequence:

    • 21 ms TMA pulse (ALD valve 2) + 6 s purge.

    • 21 ms H₂O pulse (ALD valve 5) + 6 s purge.

  • Expected:

    • Thickness ≈ 33 nm.

    • Growth rate ≈ 1.1 Å/cycle.

    • Within‑wafer σ < 1 %.

Procedure:

  1. Confirm sample is loaded and chamber is pumped and at Standby‑like conditions.

  2. In the Recipe Console, click “Load” and open “Al2O3 Thermal TMA 10nm” or your site‑specific variant.

  3. Verify:

    • TMA is physically on the ALD valve referenced in the recipe (default V2).

    • H₂O is on the valve referenced (default V5).

    • Manifold and chamber target temperatures and flows are appropriate.

  4. Set Cycle Count to desired value for the target thickness.

  5. Choose:

    • Run Once for full recipe including heat‑up and vent.

    • Run Cycles if you’re looping a sub‑sequence.

  6. Ensure log file saving is enabled (Event Log and/or Interval Log) to capture process data.

8. Shutting Down

If the tool will be idle for hours to days, leave in Standby:

  1. Close door and ensure EXPO valve open (vacuum on).

  2. Click “Standby”:

    • Chamber/door ~125 °C, manifolds ~115 °C, MFC 10 sccm.

  3. Turn bottle heater jackets OFF for any precursors not in active use to limit decomposition.

For a full shutdown (e.g., extended maintenance):

  1. Place system under vacuum; close all manual valves on precursor bottles.

  2. Run Degas on all ALD valves used in recent processes at process temperature.

  3. Turn OFF all heaters (Heaters → Off).

  4. Allow system to cool to < 40 °C internal temperature.

  5. Exit GEMFlow software, shut down laptop, then switch the rear main breaker to OFF.

Process Control Information

Process Control Context

 

Process Control Charts

 

 

Questions & Troubleshooting

Common Issues and Quick Checks

The chamber will not pump down

  • Check that:

    • Vacuum pump is ON and base pressure is acceptable.

    • CDA is ~80 psi (pneumatic valves need CDA).

    • Chamber door and metrology ports are fully closed and O‑rings clean.

    • No kinked or disconnected KF‑50 hose.

  • Run a Leak‑back Test; if the leak rate is high, stop and contact staff.

The chamber will not vent / door stuck

  • Confirm Vent has been run and delay time has completed.

  • Check door temperature > 70 °C (software interlock).

  • Do not force the door open. If it still will not open after a correct vent, contact staff.

No or very low deposition

  • Confirm:

    • Carrier gas MFC is on and set to ~10 sccm; verify supply pressure (~20 psi).

    • Precursor bottles actually contain material and are at correct temperature.

    • Relevant ALD valves are enabled in Advanced → Hardware Configuration.

    • During pulses you see a small pressure transient in the pressure graph.

  • If a single valve appears dead, run Degas; if still no pulse (and CDA is present), notify staff.

Frequent over‑temperature or high‑pressure faults

  • Over‑temperature:

    • Check setpoints vs. recommended maxima (e.g., avoid 300 °C door with frequent venting).

    • Ensure system ambient temp in logs < 45 °C (cooling fans not blocked).

  • High‑pressure / pressure‑check faults:

    • Review recent leak‑back tests.

    • Inspect vacuum lines and pump performance; verify vent and pump thresholds are reasonable under Advanced.

For detailed error codes, see the Troubleshooting chapter in the Arradiance manual and cross‑check with the System Message Log in GEMFlow.

Process Library

Create process template for tool, allows a user to fill in the details of their process. 

 

References