Tube 6 LPCVD Polysilicon/A-Si
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Expertech Horizontal Furnace - Tube 06 - Polysilicon / A-Si
iLab Name: C - Tube 06 Polysilicon and A-Si
iLab Kiosk: BRK Furnace Core
FIC: Shared
Owner: Rich Hosler & Nicholas Glassmaker
Location: Cleanroom - R Bay
Maximum Wafer Size: 8"/200 mm
Overview
LPCVD Polysilicon and Amorphous Silicon
SOP
General Description
Specifications
Process Capabilities
Polysilicon deposition at 620°C
Amorphous Silicon deposition at 580°C.
Process Temperatures
Tube 06 - 550-650°C
Process Gasses
Silane (SiH4)
Nitrogen (N2)
Cleaning/Material Requirements
Minimum Piranha clean or RCA Clean having been performed at process inception.
Samples must be bare Silicon, diced samples up to 8” wafers.
No photoresist allowed.
Recipes
Polysilicon
Silane 120 SCCM
Pressure 200 mTorr
Temperature 620°C
Amorphous Silicon
Silane 120 SCCM
Pressure 200 mTorr
Temperature 580°C
Other Recipes:
Consult with tool engineer.