Expertech Horizontal Furnace - Tube 03 - LPCVD LTO

iLab Name: C - Tube 03 Low Temperature Oxide
iLab Kiosk: BRK Furnace Core
FIC: Shared
Owner: Rich Hosler & Nicholas Glassmaker
Location: Cleanroom - R Bay
Maximum Wafer Size: 8"/200 mm

Overview

LPCVD LTO (Low Temperature Oxide)

SOP

Expertech Horizontal Furnaces

General Description

Open

LTO Tube #3

Specifications

Process Capabilities

• Tube 03 - Low Temperature Oxide deposition at 420°C

Process Temperatures

• Tube 03 - 420°C  

Process Gasses

• Silane (SiH₄)

• Oxygen (O₂)

• Nitrogen (N₂)

Cleaning/Material Requirements

• Minimum of triple solvent clean, with Piranha clean or RCA Clean having been performed at process inception.

• Samples must be bare Silicon, diced samples up to 8” wafers.

• No photoresist allowed.

Recipes

General LPCVD Low Temperature Oxide

• Oxygen 40 SCCM

• Silane 30 SCCM

• Pressure 100mTorr

• Temperature 420°C

Other Recipes:

Consult with tool engineer.