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Tube 2 LPCVD Silicon Nitride

Tube 2 LPCVD Silicon Nitride

Status

DOWN

Issue Date and Description

DCS flow issues, characterization

Estimated Fix Date and Comment

TBD

Responding Staff

R. Hosler

Expertech Horizontal Furnace - Tube 02 - LPCVD Silicon Nitride

iLab Name: C - Tube 02 Silicon Nitride
iLab Kiosk: BRK Furnace Core
FIC: Shared
Owner: Rich Hosler & Nicholas Glassmaker
Location: Cleanroom - R Bay
Maximum Wafer Size: 8"/200 mm

Overview

LPCVD SiN (Silicon Nitride)

SOP

Expertech Horizontal Furnaces

General Description

tube2.jpg
Silicon Nitride tube #2

Specifications

Process Capabilities

  • Tube 02 - Silicon Nitride deposition at 760°C

Process Temperatures

  • Tube 02 - 760°C  

Process Gasses

  • Dichlorosilane (SiCl2H2)

  • Ammonia (NH3)

  • Nitrogen (N2)

Cleaning/Material Requirements

  • Minimum of triple solvent clean, with Piranha clean or RCA Clean having been performed at process inception.

  • Samples must be bare Silicon, diced samples up to 8” wafers.

  • No photoresist allowed.

Recipes

General SiN:

  • Dicholorosilane 30SCCM

  • Ammonia 120SCCM

  • Pressure 200mTorr

  • Temperature 760°C

  • Deposition Rate: TBD

Other Recipes:

Consult with tool engineer.