Expertech Horizontal Furnace - Tube 09 - LPCVD TEOS

iLab Name: C - Tube 07 General Ox
iLab Kiosk: BRK Furnace Core
FIC: Shared
Owner: Rich Hosler & Nicholas Glassmaker
Location: Cleanroom - R Bay
Maximum Wafer Size: 8"/200 mm

Overview

LPCVD TEOS Deposition

SOP

Expertech Horizontal Furnaces

General Description

Open

Wafer Loading on Tube 7

Specifications

Process Capabilities

• Tube 09 - TEOS SiO2 deposition

Process Temperatures

• Tube 09 - 800°C  

Process Gasses

• TEOS (Si(OCH₂CH₃)₄)

• Oxygen (O₂)

• Nitrogen (N₂)

Cleaning/Material Requirements

• Minimum of triple solvent clean, with Piranha clean or RCA Clean having been performed at process inception.

• Samples must be bare Silicon, diced samples up to 8” wafers.

• No photoresist allowed.

Recipes

TBD

Other Recipes:

Consult with tool engineer.