iLab Kiosk: BRK Furnace Core
FIC: Shared
Owner: Rich Hosler & Nicholas Glassmaker
Location: Cleanroom - R Bay
Maximum Wafer Size: 8"/200 mm (for all furnaces)

General Description

Semiconductor Processing furnaces for sizes ranging from diced samples up to 8” Wafers

Tube#	Tube Name	Max Temp	Process Capabilities
Tube 1*	RCA Clean Oxidation	1100°C	Wet/Dry Oxidation (RCA Clean Wafers Only)
Tube 2*	Silicon Nitride Deposition	800°C	LPCVD SiN Deposition
Tube 3*	LTO Deposition	400°C	LPCVD SiO2 Deposition
Tube 4*	General Oxidation	1100°C	Wet/Dry Oxidation
Tube 5*	General Anneal	1100°C	Anneal
Tube 6*	Silicon Deposition	650°C	Polysilicon
Tube 7	General Oxidation	1100°C	Wet / Dry Oxidation
Tube 8	High Temp Anneal	1100°C	High-Temp Capable Anneal (future 1300C/NO Gas)
Tube 9*	TEOS Deposition	800°C	TEOS

(* = in Installation/Development process)

Standard Operating Procedure

Initial Release Oct 17, 2025

Updated Dec 10, 2025 - Revised oxide recipe times.