Expertech Horizontal Furnace - Tube 07 - General Oxidation

iLab Name: C - Tube 07 General Ox
iLab Kiosk: BRK Furnace Core
FIC: Shared
Owner: Rich Hosler & Nicholas Glassmaker
Location: Cleanroom - R Bay
Maximum Wafer Size: 8"/200 mm

Overview

 Wet and Dry SiO2 Thermal Oxidation - All sizes up to and including 8” Si wafers

SOP

Expertech Horizontal Furnaces | Standard Operating ProcedurePreview

General Description

Open

Wafer Loading on Tube 7

Specifications

Process Capabilities

• Tube 07 - Wet / Dry Oxidation Growth of SiO2

Process Temperatures

• Tube 07 - 1100°C maximum 

Process Gasses

• Hydrogen

• Oxygen

• Nitrogen

Cleaning/Material Requirements

• Minimum of Piranha clean, RCA Clean is ideal.

• Samples must be bare Silicon, diced samples up to 8” wafers.

• No metals or photoresist allowed.

Recipes

Calculated with nanoFAB - sithox - (Massoud model used for <100nm dry oxide time accuracy)

Calculations assume 4” (100) Si wafer, RCA cleaned

Wet Oxidation

Wet oxidation has a faster growth rate, lower density, and higher dielectric compared to dry oxidation.

• H2 - 3.5 SLPM + O2 2.0 SLPM

• Dry oxide 10min + Wet oxide N min + Dry oxide 10min

  • 500nm N=00:37:32

  • 1000nm N=02:12:31

  • 1500nm N=04:44:11

  • 2000nm N=08:12:34

Dry Oxide

Dry oxidation has a slower growth rate, higher density, and a lower dielectric compared to wet oxidation.

• O2 - n SLPM

• Dry Oxide N min

  • 50nm N=00:14:30

  • 100nm N=00:43:15

  • 200nm N=02:23:06

  • 300nm N=04:39:48

Other Recipes:

Consult with tool engineer.