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Tube 9 TEOS Deposition

Tube 9 TEOS Deposition

Status

In Development

Issue Date and Description



Estimated Fix Date and Comment

TBD

Responding Staff



Expertech Horizontal Furnace - Tube 9 - TEOS Deposition

iLab Name: C - Tube 9 TEOS Deposition
iLab Kiosk: BRK Furnace Core
FIC: Shared
Owner: Rich Hosler & Nicholas Glassmaker
Location: Cleanroom - R Bay
Maximum Wafer Size: 8"/200 mm

Overview

 LPCVD Deposition of SiO2 using TEOS - All sizes up to and including 8” Si wafers

SOP

Expertech Horizontal Furnaces | Standard Operating Procedure

General Description

t9.jpg
Wafer Loading on Tube 9

Specifications

Process Capabilities

  • Deposition of SiO2 via reaction of TEOS and O2.

Process Temperatures

  • Tube 9 - 800°C Typical 

Process Gasses

Cleaning/Material Requirements

  • Piranha or RCA Clean is required.

  • Sample size from diced samples up to 8” wafers.

  • No metals or photoresist allowed.

Recipes

TEOS Deposition

  • TBD - in checkout/development.