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Overview

General Description

This is a general purpose 8" ICP RIE (Inductively Coupled Plasma Reactive Ion Etcher).

This tool replaces the STS Advanced Oxide Etcher (AOE).

Specifications

This is an ICP RIE with the following attributes:

• Max ICP power is 3,500w and max Bias Power is 600w

• Available gases are SF6, CF4, Ar, O2, CHF3, BCl3, CL2 & N2

• Maximum wafer size is 200mm - 8”

Technology Overview - Remove if multiple tools use the same technology/process

 Description of the science behind the process. Include figures and diagrams if applicable.

Sample Requirements and Preparation

Samples that may be used in the tool, materials that are compatible/incompatible, and the required cleaning before the tool may be used. May include both an "ideal" clean and a minimum required clean. Also include BOE/oxide removal, dehydration, or any recommended post process steps.

Standard Operating Procedure

Standard procedure for tool operation, base off established Birck SOPs.

Process Control Information

Process Control Context

Process Control Charts

Questions & Troubleshooting

Question about tool use or process result?
Answer to question.

Process Library

Create process template for tool, allows a user to fill in the details of their process. 

References

Manufacturer brochures, specifications, papers with relevant info on process, and presentations covering the technology. Confluence lacks a native reference feature, so these are added as links.