Parylene CVD - Internal Resources
iLab Name: Parylene CVD Furnace
iLab Kiosk: BRK Growth Core
FIC: Babak Ziaie
Owner: Sean Rinehart
Location: Cleanroom - D Bay
Maximum Wafer Size: 8"/200 mm
Overview
General Description
The Parylene deposition system model 2010 is a vacuum system used for the vapor deposition of the Parylene polymer type C and N onto a variety of substrates. The coating is truly conformal. The system consists of Vaporizer, Pyrolysis main furnace, Deposition chamber, Cold trap, and Vacuum pump.
Specifications
Base pressure is less than 10-20 mTorr. Typical Process Settings:
Type C:
- Vapor Heater Temp.: 175C
- Pyrolysis Heater Temp.: 690C
- Chamber Gauge Temp.: 135C
- Pressure: Base pressure + 15 Vacuum Units (~35 mTorr)
- Deposition Rate: 5um/hour
Type N:
- Vapor Heater Temp.: 160C
- Pyrolysis Heater Temp.: 650C
- Chamber Gauge Temp.: 135C
- Pressure: Base pressure + 55 Vacuum Units (~60-75 mTorr)
- Deposition Rate: 0.75um/hour
Technology Overview
There are three main steps in the process:
- Vaporizer: Parylene is vaporized from its solid dimer phase inside the vaporizer.
- Pyrolysis furnaces: It's a high temperature furnace (> 600C) which converts the dimer to monomer phase.
- Polymerization: Polymerization happens at room temperature inside the chamber.
In summary, the system converts Parylene dimer to a gaseous monomer. Upon deposition the material polymerizes at room temperature onto the substrate. The coating thickness depends on the amount of dimer loaded in the vaporizer
Sample Requirements and Preparation
Standard Operating Procedure
Questions & Troubleshooting
Can I use a Parylene as a mask for a silicon KOH etch?
Although Parylene itself is chemically resistant, the adhesion between silicon and the Parylene layer will be significantly degraded in hot KOH. The mask will separate from the silicon, making it a poor choice for this application.
Process Library