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2024-12-20 to 2025-01-02: Reduced Holiday Operations

Dear Birck Research Community,

The Purdue winter recess begins effective Friday afternoon December 20th and concludes Thursday morning, January 2. The university is officially closed during this time. As we have done in past years, the Birck Nanotechnology Center will remain available for research but will be unstaffed and hazardous gasses will be unavailable. Lab work may otherwise proceed, though any fume hood work must be done with someone else present in the same laboratory or cleanroom bay (the "buddy" system). Click the link above to get more detail about equipment conditions and rules.


Refer to the Material and Process Compatibility page for information on materials compatible with this tool.
Equipment Status: Set as UP, PROBLEM, or DOWN, and report the issue date (MM/DD) and a brief description. Italicized fields will be filled in by BNC Staff in response to issues. See Problem Reporting Guide for more info.

StatusUP
Issue Date and Description


Estimated Fix Date and Comment

Responding Staff

/wiki/spaces/BNCWiki/pages/6240548


iLab Name: Stress machine

iLab Kiosk: BRK Metrology Core
FIC:
Shared
Owner:
Rich Harlan
Location:
Cleanroom - R/S Chase
Maximum Wafer Size: 
8"/200 mm

Overview

General Description

The Thin Film Stress Machine is a non-destructive testing tool used to analyze the stress of thin films. The stress machine analyzes the radius of curvature of your whole wafer prior to the film being deposited. Then after film deposition, the stress machine reanalyzes your sample to compare to the original. This change in radius of curvature will then result in a film stress value in the units of MPa.

Specifications

  • Capable of 4, 5, and 6 inch whole wafers
  • Can measure film stress from ambient to 500°C
  • Can measure film stress over a period of time
  • Capable of graphing time vs stress, and temp vs stress
  • Capable of measuring deflection of the substrate
  • Nitrogen reduces oxidation during heating
  • CDA can assist in cooling

Technology Overview

 


Sample Requirements and Preparation

Note: You must know your substrate thickness and film thickness to achieve a proper stress value


Standard Operating Procedure

 1.  SAFETY REQUIREMENTS

    1. Safety glasses must be worn whenever in the cleanroom, except when using a microscope or when wearing protective goggles.
    2. This tool utilizes two lasers, 670nm l and 780nm l, which are enclosed within the tool. Do not remove any covers or defeat any interlocks
    3. This tool is capable of heating the sample chuck to 500°C. Care must be taken when using this feature to prevent burns


 2.    EQUIPMENT

    1. FLX-2023-S Thin Film Stress
      i) Toho Technology Corp, model FLX-2023-S, S/N 0708-8114
      ii)     Heated chuck capable of reaching 500°C (idles at room temperature)
      iii)    Wafer Locator Fixtures that correspond to the 3-pins at 120°intervals
              (1)   Square locator fixture used with standards
              (2)   100-mm (4-inch)
              (3)   125-mm (5-inch)
              (4)   150-mm (6-inch)
      iv)    Hot Chuck Cover
      v)     Standards;
              (1)   Curve Mirror Standard (20.069-meter radius, S/N 0608-0118)
              (2)   Flat Mirror Standard (S/N 0608-0118)

 3.   TOOL CONFIGURATION

Figure1

Figure2

Figure3

4.    CYCLE OF OPERATION

  1. Verify the tool is powered up and ready to use. Refer to Section 6 for the Start-up procedure.
  2. Verify the Baseline performance check has been completed prior to measuring any samples.


      BASELINE

  1. Select the square locator fixture for the baseline measurement.
  2. Open the front door (Figure1) and place the square locator fixture in the measurement chamber making sure the fixture is aligned to the three (3) alignment pins in the chuck.
  3. Position the flat mirror standard inside the square so the mirror is against the back and right-side edges of the locator fixture shown in Figure2.
  4. Close the front door.
  5. Select “Process programs” in the “Edit” dropdown window:  
  6. Click on the “Load” button
  7. Select the “mirror670.PRC” process program
  8. Select the “Measure” dropdown at the top of the page
  9. Select the “First (no film)” option
  10. Type in a unique name next to “file:” and a unique number next to “ID”
  11. Select the “Measure” button
  12. The tool will scan the standard and display the Radius value as well as the bow value (red font) displayed on the graph.
  13. Open the door to remove the flat mirror
  14. Exchange the flat mirror with the “R=20.069M” curved mirror so the mirror is positioned against the back, right corner of the locator fixture as shown in Figure2.
  15. Close the front door
  16. Scan the curved standard and record the value
  17. Select “Process programs” in the “Edit” dropdown window: 
  18. Click on the “Load” button
  19. Select the “mirror780” process program
  20. Select the “Measure” dropdown at the top of the page
  21. Select the “First (no film)” option
  22. Type in a unique name next to “file:” and a unique number next to “ID”
  23. Select the “Measure” button
  24. The tool will scan the standard and display the Radius value as well as the bow value (red font) displayed on the graph.
  25. Open the door to remove the flat mirror
  26. Exchange the flat mirror with the “R=20.069M” curved mirror so the mirror is positioned against the back, right corner of the locator fixture as shown in Figure2.
  27. Close the front door
  28. Scan the curved standard and record the value


      SAMPLE MEASUREMENT

  1. Open the front door and verify there are no other locator fixtures inside the tool.
  2. The 100mm locator fixture has several different orientation options, most will use 0°, record the orientation used. The same orientation must be used during the second measurement to get usable measurements. There is a black line marked at the 3:00 position for the 0° orientation.
  3. Place the wafer sample inside the locator fixture with the flat aligned with the ring and the wafer lying flat in the measurement chamber with the polished side facing up.
  4. Close the front door.
  5. Select “Process programs” in the “Edit” dropdown window: 
  6. Click on the “Load” button
  7. Select the desired process program
  8. Select the “Measure” dropdown at the top of the page
  9. Select the “First (no film)” option
  10. Enter (and remember) the “File:” name that is entered (example 200202.DAT)
  11. Enter (and remember) the “ID:” number that is entered
  12. Press the Measure button
  13. Remove the substrate and grow/deposit the film.
  14. Place the wafer in the fixture using the same orientation
  15. Select the “Edit” dropdown window and select “Process Programs”
  16. Select the same recipe used for the first/no film measurement
  17. Select the “Measure” dropdown and select “Single”
  18. Enter the same filename used for the first measurement
  19. Enter the same ID that was used before
  20. Enter the film thickness
  21. Press the measure button

The stress value will be displayed on the top graph in MPa units

This is the TOHO Stress Measurement System Control Chart:

 


Questions & Troubleshooting



Process Library


References

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