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2024-12-20 to 2025-01-02: Reduced Holiday Operations

Dear Birck Research Community,

The Purdue winter recess begins effective Friday afternoon December 20th and concludes Thursday morning, January 2. The university is officially closed during this time. As we have done in past years, the Birck Nanotechnology Center will remain available for research but will be unstaffed and hazardous gasses will be unavailable. Lab work may otherwise proceed, though any fume hood work must be done with someone else present in the same laboratory or cleanroom bay (the "buddy" system). Click the link above to get more detail about equipment conditions and rules.


Refer to the Material and Process Compatibility page for information on materials compatible with this tool.
Equipment Status: Set as UP, PROBLEM, or DOWN, and report the issue date (MM/DD) and a brief description. Italicized fields will be filled in by BNC Staff in response to issues. See Problem Reporting Guide for more info.

StatusUP
Issue Date and Description


Estimated Fix Date and Comment

Responding Staff

/wiki/spaces/BNCWiki/pages/6239184


iLab Name: Cleanroom Ellipsometer
iLab Kiosk: BRK Metrology Core
FIC:
Shared
Owner: Dan Hosler

Location:
Cleanroom - P Bay
Maximum Wafer Size: 
6"/150 mm

Overview

General Description

The cleanroom Ellipsometer can measure the thickness and refractive index of thin films on reflective substrates, as well as the optical properties of bare substrates.

Specifications

  • The stage can handle up to a 6 inch wafer diameter
  • Light source: HeNe laser, 632.8 nm, 1 mW output.
  • Incidence angles: 70° (default), 50°, 30°.
  • Maximum sample thickness: 1/2 inch.
  • Maximum  sample diameter: 5 inch.
  • Film thickness range: 0-60,000 Angstroms.
  • Accuracy: ±3 Angstroms (manufacturer claimed over most of measurement range)
  • Repeatability: ±1 Angstrom (manufacturer claimed over most of measurement range)
  • Spot size is approximately 1mm by 3mm
  • Your substrate must be polished and must not rough to defract the laser

Technology Overview

 Ellipsometry measures the thickness of an optically transparent film based on a change in polarization of an incident laser. This change is compared to a model, and values for thickness and refractive index are calculated. The values PSI (psi, Ψ) and DEL (delta, Δ).

 

The software uses the following abbreviations:

  • d: Thickness of film being measured
  • Nf: Real value of refractive index for film being measured
  • Kf: Imaginary value of refractive index for film being measured
  • ω (OMEGA): Thickness period; used for determination of thick film thickness
  • Ns: Real value of refractive index for substrate
  • Ks: Imaginary value of refractive index for substrate
  • Φ (PHI): Angle of incidence
  • ψ (PSI): Amplitude ratio as determined by measurement
  • Δ (DELTA): Phase difference as determined by measurement
  • λ (LAMBDA): Wavelength of incident light; fixed at 632.8 nm for HeNe laser

 

Sample Requirements and Preparation

Backside must be free of contaminants that may transfer to the stage. The area of measurement should be clean to be measured properly.

 

Standard Operating Procedure


Questions & Troubleshooting


 

Process Library


References

 

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