STS AOE


Refer to the Material and Process Compatibility page for information on materials compatible with this tool.
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StatusUp
Issue Date and Description


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Responding StaffFrancis


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iLab Name: STS AOE
iLab Kiosk: BRK Etch Core
FIC: Dimitrios Peroulis
Owner: Francis Manfred
Location:
Cleanroom - L Bay
Maximum Wafer Size: 
4”/100 mm

Overview

TypeMaterialsRestricted MaterialsAvailable GasesMax RF PowerWafer Size
ICP RIESilicon, Silicon Nitride, Silicon Oxide, Silicon Carbide / Photo resist, Ni, Cr, and AlAu, Ag, Pt, CuO2, Ar, SF6,C4F83000 ICP / 1200 Platen4 inch (100 mm) SEMI Specification

General Description

The STS AOE Deep Reactive Ion Etch (DRIE) system is designed to provide high-aspect-ratio etching of dielectric films using an inductively coupled plasma (ICP) and reactive Fluorine chemistry.

 

Fluorine-to-Carbon Ratio Model


Specifications

Available Chemistry

GasMin Recommended Flow (sccm)Max Recommended Flow (sccm)Mass Flow Controller Specified Max (sccm)Notes
C4F8 Lo23840F/C ratio of 2. Used when recipes call for flow rates up to ~30 sccm of C4F8.
O259499.1Addition of O2 increases fluorine concentration by combining with carbon to form CO and CO2. The carbon would otherwise bond to fluorine and lower concentration.
CF42.240.843F/C ratio of 4.
He25475500Helium is a noble gas that can be added to dilute a gas mixture for controlling etch rate or other aspects of the etch. Because it is inert, this does not effect the chemistry of the plasma. It is also added to increase ion bombardment which reduces passivization enough to etch oxide and achieve vertical sidewall. Concentrations range anywhere from 50% of the mixture to over 10x that of the reactive species.
C4F8 High10190200F/C ratio of 2. Used when recipes call for flow rates between 30 and 190 sccm of C4F8.
SF625475500

SF6 etches Si much faster than SiO2 and is a good choice when using an oxide mask to etch Si. SF6 is also a good choice when etching SiN with an oxide etch stop layer.

Ar3.667.471

Argon is a heavy gas that can be added to dilute a gas mixture for controlling etch rate or other aspects of the etch. Because it is inert, this does not effect the chemistry of the plasma. It is also added to increase ion bombardment which reduces passivization enough to etch oxide and achieve vertical sidewall. Concentrations range anywhere from 50% of the mixture to over 10x that of the reactive species.

Notes:

  1. Mass flow controllers are not good at controlling flows at or near their design limits.  Trying to control within 5% of the gas flow limits will result in process interruptions and difficulty in repeating processes.  It is best practice to scale all gas flows so you are not operating within these limitations.  If you cannot do this, speak with staff for alternatives.

RF Plasma Controls

RF SourceMax Power (watts)
ICP Coil Power3000
Platen Power1200

Available Standard Recipes

 Click here to expand Standard Recipe Table...



R RECIPENAME

CONTINUOUS PROCESS S1APC AUTO S1S1 DESCRIPTIONMINUTES S1SECONDS S1COIL LOAD CAP S1COIL TUNE CAP S1PLATEN LOAD CAP S1PLATEN TUNE CAP S1STRIKE PRESS S1PRESS S1POSITION S1COIL RF S1PLATEN RF S1C4F8 Lo S1O2 S1CF4 S1He S1C4F8 High S1SF6 S1Ar S1
1

O2 Cleaning

OFFONSample Clean2005075315410401500100010000000
2SiOx PR STDOFFON200 SIO Etch30607550501040120030000200000
3SiOx PR FASTOFFON1000 SIO Etch3060755050104014002001604348000
4SIOx Si STDOFFON5000 SIO Etch3060755050104013005001800300000
5SIOx MTLOFFON300 SIO Etch306075505010401250250010008000
6Quartz MTLOFFON3000 Quartz Etch3060755050106014003000002016000
7SIN PR STDOFFON4000 SIN Etch306075505010401250200084004000
8SIC MTL STDOFFON??? SIC Etch30506040542015020005000000104
9Cham CleanOFFOFFService300607550500092180010009900000
10LIP BURNOFFONService0306075505003004003005000000


Sample Requirements and Preparation

Gold (Au), Silver (Ag), Copper (Cu), and Platinum (Pt) are NOT allowed in the chamber in any amounts. Gold, silver, copper, and platinum do not have a vapor phase etch byproduct, and are therefore not allowed in the chamber. Contact the tool engineer for more information on permissible materials.

 Click here to expand...
  • Commonly used substrates include 300-700 um thick wafers in the following materials. (1-flat, 2-flat, no flat)
    • Silicon
    • Fused Silica
    • Borofloat (Schott)
  • The tool's wafer handling robot is designed to fit 100 mm Prime Silicon Wafers, therefore all samples must meet this form factor requirement.  These wafers are kept in stock and can be purchased from the building supply room during office hours.
  • Samples that are not full wafers must be securely mounted to a full wafer.  Samples must be bonded and not simply placed on carrier wafers, bonding aids in thermal transfer and prevents resist burning.  Recommended mounting adhesives include crystalbond 509, 555 HMP, and 590 .
    • Crystalbond 509 - (Bonding Temp 145 C / Viscosity 6,000 cps / Solvent Acetone)
    • Crystalbond 555 HMP - (Bonding Temp 80 C / Viscosity 500 cps / Solvent Hot Water)
    • Crystalbond 590 - (Bonding Temp 180 C / Viscosity 9,000 cps / Solvent Methanol)
    • You must ensure there is no residue on the backside of your wafer.

  • Photoresist (AZ 4620, AZ 9260) must be baked in a 120 C oven for at least 20 minutes.
  • This system utilizes a weighted clamp which interferes with approximately 12 mm of the wafer perimeter. Uniformity is best achieved on the inside 3 inches (75 mm) of a 4 inch (100mm) wafer and so it is best to eliminate all patterning and on the outside 1/2 inch (12 mm) of the wafer.   Characterization of results in this region will be invalid due to the wide process variation that can be present. 
    • This clamp is made up of 8 ceramic "fingers" which bear down near the edge of the wafer and hold it down to the chuck.  Artifacts will be left around the perimeter of the wafer/carrier, see image below.  Sample geometry/features should avoid this area of the wafer.  The wafer rests on a lip seal, similar to an O-ring, which seals the backside for He cooling the wafer.  The wafer backside must be free of resist, debris, tape, or any other material that would interfere with the lip seal.  The lip seal is smaller than the wafer diameter by several mm, as a result the wafer will be etched from the top and bottom at the edges of the wafer.
    • The wafer heats up on the outside rim where cooling is less effective. The heat travels toward the center of the wafer where the wafer back side cooling removes the heat. The clamp fingers act as heat sinks and remove heat from the edge but to a lesser degree as longer process times occur. In addition to the basic process parameters, wafer temperature is a major factor in uniformity and etch rate. The higher the wafer temperature, the more aggressive the etch phase and the less resistive the masks.  This has the effect of creating a flower petal pattern outside the uniform zone.   The center area is the most uniform.  The white dots are where the wafer clamp contacts and are slightly cooler than the outside edge.  The hottest portion of the wafer is the outside edge at the midpoint between the wafers clamps. 

Helium is delivered to the bottom of the wafer at about 10 torr of pressure. Coupled with the downward pressure of the clamp fingers, the wafer is subjected to high levels of stress. This stress needs to be kept in mind during deep etches, since thinner wafers are weaker.

Samples that will finish with less than 400 um of wafer thickness remaining must be bonded to a carrier wafer. Deep etches may require changing carrier wafer multiple times to complete the required etch depth.


Approved Mask Materials

 Click here to expand...
  • Cured Photo Resist
    • Higher coil powers can cause burning in resist. Plasma resistance (i.e. resistance to burning and selectivity) can be improved by curing the resist appropriately. UV baking and
      hard baking can give tough resist without reflow.  

    • E-beam resist tends to have lower plasma resistance than photo-resist.

  • Thoroughly rinse developed samples with UPW. The wafer must be free of resist developer as the chuck may be corroded by the developer.
  • SU-8 is not allowed
  • Chromium (Cr)
  • Nickel (Ni)
  • Silicon (Si)
    • Silicon masks tend to sputter at an angle near 45°, so that even when there is a substantial thickness of Si left, mask recession can cause a significant reduction in the etch profile angle.

  • Silicon Nitride (SiN)
  • Silicon Oxide (SiO)
  • Aluminum (Al)

Standard Operating Procedure

 Click here to expand...

Make Log Book Entry

Use the kiosk to make your logbook entry

Log into iLab and start your reservation

Verify there is no wafer in the chamber

Generally, the previous user should have unloaded the wafer and left the chamber empty. However, the dummy wafer used for chamber cleaning does get left inside the chamber frequently. Look for Red Unload Wafer Icon on the Operator screen, . If this icon is present for W1 or for W2, then there is a wafer inside the chamber.


If a wafer is present, skip to Unload the Wafer and unload the wafer.

*Note: When there is a transfer fault, the control sometimes is confused about the presence of the wafer in the chamber. If you unload the wafer, and nothing comes out of the chamber, you should try to load and unload a dummy wafer to make sure there is no obstruction inside the chamber. If the dummy wafer does not return, stop and contact engineering staff support, there is likely a lost wafer inside causing interference. If successful, the empty unload cycle will clear the confused condition and return the tool to normal.

Vent the Load Lock

From the Operator Screen, press the Vent Load Lock button, .

The load lock vent sequence will pump the pressure down, then purge with N2, thus raising the pressure.This cycling of the pressure in the Load Lock Press display, , will happen three times before fully venting the load lock. This is a purge cycle, which ensures no dangerous etch byproducts can get from the chamber during unload, and then expose the user when opening the load lock.

When the load lock is fully vented, the Load Lock Press display, , will show 750000 mTorr indicating atmospheric pressure (~760 Torr) is achieved. The lid to the load lock will sometimes open a few inches on its own, and sometimes the seal sticks enough that you have to lift it manually a bit. Lift the lid to it's full open position, it is held open with gas springs for loading and unloading the wafer.

Animated GIF

Load your wafer into the load lock

The backside of the wafer must be clean. Contaminants on the backside of the wafer will transfer to the chuck and lip seal causing helium leak up rate errors. This contamination can be difficult to recover from and require a significant amount of time.

Load the 4 inch(100 mm) wafer onto the carousel and align the wafer flat with the alignment marks on the carousel. The alignment does not need to be perfect, plus or minus 5 degrees should be sufficient. Make sure the wafer is sitting flat on the inner ledge of the carousel tray. Note the number located near the carousel tray indicating position 1 or 2.

Lower the load lock lid until it is completely closed. Pull the handle toward you to latch the lid down in preparation for pump down. Failure to do so will result in the lid springing back up a few inches with no possibility to pump down.

Note: Usually there is a dummy wafer located in the load lock in one of the two positions. This wafer is intended for you to use for running dummy processes or chamber cleans. You may leave this wafer in the load lock while performing your etch.

Note: If you bump or move the carousel out of alignment during wafer loading, this is acceptable and will not cause any problems. Simply load your wafer as described above, when you press in the next step, the carousel will be realigned as needed.

Animated GIF

Animated GIF

Pump down the Load Lock

With the load lock lid latched closed, and from the Operators screen, press the Pump Map button.

The load lid will be pulled down by the pressure difference, the latch will release on its own but lid will stay down, this is normal once the pump down has started. Looking through the window in the top of the load lock lid, you will see the carousel lift slightly, then rotate a couple of turns before finally coming to rest in the down position with carousel position one closest to the chamber. During this time, the tool is detecting which positions have wafers loaded onto them. It is also indexing the rotational position of the carousel to align with the chuck inside the chamber.

Note: If the Pump Map sequence does not complete and generates errors, press the reset errors button. Return to the Operator screen and press again to see if the problem will self correct. If the problem persists, please stop and contact engineering support.

Transfer the wafer to the Etch Chamber

From the operator screen, click the load button corresponding to the carousel position you loaded your sample onto. This process takes a few minutes, the load lock must be pumped down appropriately, then the transfer gate opens and you will see the carousel slide forward into the chamber. When the carousel returns to the load lock, visually check to ensure the wafer is no longer resting on the carousel tray as expected.

If there is a wafer already loaded in the chamber, you must remove it first. See instructions here. This will be indicated by one of the Load icons being displayed as red and will be labeled Unload.

Edit / Load Process Recipe

 

Navigate to the recipe editor. Scroll down to find the recipe you wish to edit / load. If necessary, edit the recipe as required.

Select the recipe and press the load button, .

Press OK at the prompt to write specified data . You will then see a progress indicator counting up, , returning to the recipe editor screen when completed.

Press Close in the lower left corner of the screen, . The recipe that will be affected by the save prompt is indicated next to the Close button as shown. If you have made changes to the recipe, you will be presented with the traditional save prompt. Please answer NO for any standard recipes. Edits you made for time will be loaded into system memory from the step above, and your etch will run for the time you specified.


Run the Etch Process

From the Operator screen, click the blue start recipe button, to execute the recipe. The recipe name that is loaded into memory will be displayed on the button. In the example shown, the O2 Clean recipe will be executed when button is pressed. The blue recipe button will change to an Abort button, , once recipe execution has started. Use this button to stop the recipe before completion.

During recipe execution, there is a status bar that displays the current status of the tool. This displays the current recipe name above the table, status in the table, and recipe name/sample name/date:time stamp below the table.

Seq Step - The current step of the overall sequence. This will advance until recipe is complete.

Start Time - Total step time will be displayed in this cell for steps that are timer based.

Time left - Shows remaining time for steps that are timer based.

Step Name - Shows a description/name for identified sequence step.


Some of the Seq Steps you will see as the recipe progresses (no user involvement is required after starting recipe):

1 - Checking Faults: Checking the system for any faults that will prevent recipe execution.

9 - Zeroing APC: References origin of VAT pressure control valve.

10 - Checking He LUR: Checking Helium leak up rate. This is a measure of how well the wafer is sealed against the chuck. Helium provides sample critical sample cooling during the etch. High leak up rates will stop recipe execution, and will dilute the etch chemistry affecting the etch process.

14 - Pumping: A set time for pumping the chamber down to base pressure before the etch process.

16 - Stabilization: Etch gas flows are activated, automatic pressure control activates, and stabilizes the chamber pressure at the recipe strike pressure setting.

17 - (Recipe Name): Execution of the etch recipe that was specified to be run. The full etch time should be displayed in the Start Time field, while a count down to completion is shown in the Time Left field.

Transfer the wafer from the Etch Chamber to the load lock

From the operator screen, click the unload button corresponding to the carousel position that was loaded into the chamber.  This process takes a few minutes, the load lock must be pumped down appropriately, then the transfer gate opens and you will see the carousel slide forward into the chamber. When the carousel returns to the load lock, visually check to ensure the wafer is resting on the carousel tray as expected.

Vent the Load Lock to remove your sample

See instructions for venting here....



Properly Executing an O2 Plasma Chamber Clean

 Click here to expand...
  1. Load a dummy wafer into the chamber.
  2. Load and start the CHAMBER CLEAN recipe.
  3. When the recipe reaches step 17, the etch recipe step, take note of the APC/Process pressure. A dirty chamber will have an APC pressure around 30 mTorr under initial conditions.
    1. From the Operator screen, this pressure is shown as below
    2. From the Main screen, this pressure is shown as below
  4. As this recipe runs and the chamber is cleaned, the APC/Process pressure will decrease. This pressure will decrease to about 15 mTorr indicating the process was successful. This should take no more than 30 minutes.
  5. Following a chamber clean, a short 5 minute conditioning run, with the process conditions, is necessary to stabilize the chamber conditions for your process.

 

Recipe Editor Instruction

 Click here to expand...


Recipe Editor Screen

 

Process parameters are listed across the top of the recipe table columns. Each table row is a separate recipe.

  • RECIPETYPE - Selecting this cell will highlight the entire row, selecting the entire recipe. This parameter cannot be edited.
  • R RECIPENAME - The name of the process recipe.
    • If you are creating a new recipe, please select an unused row, indicated by "New" in R RECIPENAME column.
      • Use the following naming convention: Etch Mask Alias
      • Example: "SiO2 PR JSHEPAR" (Silicon oxide etch with photo resist mask for Jerry Shepard)
  • CONTINUOUSPROCESS - Recommend OFF. Disables the recipe timer so the process runs indefinitely.
    • Setting this to ON requires a manual stop by the user!

  • APC AUTO S1 - Recommended setting ON. Enables/disables pressure control.

  • S1 DESCRIPTION - Step 1 process description.
    • If you are creating a new recipe use this field as you see fit.
  • Total Step 1 Etch Time = MINUTES S1 + SECONDS S1
    • MINUTES S1 - Minutes of etching time, or plasma on time, for step 1.
    • SECONDS S1 - Seconds of etching time for step 1.
  • COIL LOAD CAP S1 - Recommended 60. Starting position for coil load capacitor, range 0 to 100.
  • COIL TUNE CAP S1 - Recommended 70. Starting position for coil tune capacitor, range 0 to 100.
  • PLATEN LOAD CAP S1 - Recommended 50. Starting position for platen load capacitor, range 0 to 100.
  • PLATEN TUNE CAP S1 - Recommended 50. Starting position for platen tune capacitor, range 0 to 100.
  • STRIKE PRESS S1 - Recommend same a PRESS S1. Pressure at which plasma will be lit, in mTorr. Some plasma chemistries can be difficult to lite at low pressures, this setting can help overcome that problem. If different than PRESS S1 setting, system will stabilize on this pressure, then apply power to lite the plasma, and a few seconds later the system will move to PRESS S1 setting.
  • PRESS S1 - Process pressure in the chamber during the etch, in mTorr.
  • Position S1 - Default 0. Sets position of throttle valve when APC AUTO S1 is Off, otherwise not applicable, Range 0 to 100.
  • COIL RF S1 - Maximum 3000. Process power for the plasma source, in Watts.
  • PLATENRF S1 - Maximum 1200. Process power for the plasma bias, in Watts.
  • C4F8 LO S1, O2 S1, CF4 S1, HE S1, C4F8 HI S1, SF6 S1, AR S1 - Gas flow settings for plasma source chemistry. See Available Chemistry here for more detail.

Note: If you continue to scroll to the right in the recipe table you will find the same set of columns as above, but all with be labeled with S2 instead of S1. Continuing to the right will repeat again up to S6. These are sequential process steps. So S1 will be executed in its entirety, then S2, and so on. Most people do not use these, and would simply create multiple one step recipes and then just manually execute them in order. This feature is geared toward repetitive, complex production type etch processes that we typically do not use.


Recipe Editor Screen Navigation Panel

In the lower right corner of the Recipe Editor screen you should see a navigation panel as shown to the right. If you do not see this panel, click the panel expand button, in the lower right corner of the screen.


  • - This button will load your selected recipe into system memory so it can be ran by the tool. You must first select the entire recipe to activate this button. Do this by selecting the cell in the first column of the recipe table, . The entire table row should be highlighted and the load button will turn red.


  • - Enter edit mode by clicking on the edit button. In order to change recipe values in the table cells, you must enter edit mode. When edit mode is active, the button will turn white, . While edit mode is active, any click on the table cells will activate a pop up window for user input. If you have done this by accident, press the cancel button. Pressing Enter will change the value in the field to that displayed in the pop. Those values may or may not be the same.


  • - These buttons will increase and decrease the size of the font shown in the table cells. Useful if the full label is too long to be displayed in the cell.


  • - This button adjusts the grid pattern color scheme and progresses through a repeat cycle with multiple presses.


  • - Show or hide commas in large numbers.


  • - Page Up / Down / Left / Right on the recipe table.


  • - Scroll Up / Down / Left / Right on the recipe table.

Questions & Troubleshooting

What happens if wafer unloading from the chamber fails?

First, hit the "ALARMS" button, "Reset Faults". The go back to the Operator tab and attempt to unload again.

Why can't I load a wafer?

Go to the operator screen, if a wafer is currently in the chamber there will be a red square that says UNLOAD W1(W2). This indicates a wafer is in the chamber. Unload the wafer, and proceed.


Process Library



References

Typical Oxide Etch Tips and Trends (Internal Resource)

STS AOE DRIE Trends

STS AOE SOP (2007)

STS Quick Guide.pdf

VAT Controller

Recipe data gathering from other sources...

 Click here to expand recipe data gathering...

Recipe Name at the ToolDescriptionMaskFlows (sccm)

Platen RF (Watts)

Coil RF(W)Pressure (mTorr)

Etch Rate (nm/min)

Etch/mask

CF4O2


STD OX EtchStandard SiOx Etch Recipe
14



504004
O2 CleanOxygen Clean

50


10200050












Proposed Recipes
ProcessDescriptionMaskFlows (sccm)

Platen RF (Watts)

Coil (W)Pressure (mTorr)

Etch Rate (nm/min)

SiO2/mask

C4F8He

H2 NA
Typical ProcessSi Mask / SiOx Etch RecipeSi18300


50013004500/25
PR Mask/ SiOx Etch RecipePR10174

830010004300/75

Trends

Increases in values produce shown trend. More arrows indicate a stronger effect.

Profile Angle



↓↓↑↑
Etch Rate↑↑


↑↑

Selectivity





Non-Uniformity




STS Advanced Oxide Etch Operating Notes / Andrew Newton / 4-11-2005 document (filename: Typical Oxide Etch Tips and Trends.doc ; Typical baseline processes and expected results
ProcessDescriptionMaskFlows (sccm)Platen RF (Watts)

Coil (W)

Pressure (mTorr)

Etch Rate (nm/min)

SiO2/mask

C4F8O2


Metal Mask ProcessSiOx or Quartz EtchNi, Cr, Al8010


18018006500/10

Trends

Increases in values produce shown trend. More arrows indicate a stronger effect.

Profile Angle




↑↑

Etch Rate





Selectivity





Non-Uniformity





STS Advanced Oxide Etch Operating Notes / Andrew Newton / 4-11-2005 document (filename: Typical Oxide Etch Tips and Trends.doc ; Typical baseline processes and expected results
ProcessDescriptionMaskFlows (sccm)

Platen RF (Watts)

Coil (W)

Pressure (mTorr)

Etch Rate (nm/min)

Pyrex/mask

C4F8O2

He
Metal Mask ProcessPyrex EtchCr, Al8010


60017006500/50

Trends

Increases in values produce shown trend. More arrows indicate a stronger effect.

Profile Angle





Etch Rate↑↑


↑↑↑↑
Selectivity



Non-Uniformity








Trends with pyrex are less well defined than with other silica etches, because of the variation in composition of pyrex glasses. Also different masks respond differently to different process changes. Cr masks appear to have an optimum O2 concentration, above and below which selectivity drops. This is not generally observed with Al mask, where increasing O2 reduces selectivity.


STS Advanced Oxide Etch Operating Notes / Andrew Newton / 4-11-2005 document (filename: Typical Oxide Etch Tips and Trends.doc ; Typical baseline processes and expected results
ProcessDescriptionMaskFlows (sccm)

Platen RF (Watts)

Coil (W)

APC %

Pressure trace

(~30 min)

O2



Chamber CleanPlasma Clean / ConditionNA99



10018009232 dirty / 20 clean

Typically after 30mm of etching, a plasma chamber clean is required. With highly polymeric processes, such as pyrex etches it is advisable to run a clean after each 20 mm of etching.

It is useful to monitor the Pressure trace on the datalog. This should have dropped, typically from around 32 to 20 for a 92% APC and 99 sccm flow after no more than about 30 minutes to a flat, stable value. If not the clean should be repeated until it has. Following a clean a short conditioning run, with the process conditions, is necessary. 20 minutes should be considered safe.

STS Advanced Oxide Etch Operating Notes / Andrew Newton / 4-11-2005 document (filename: Typical Oxide Etch Tips and Trends.doc ; Typical baseline processes and expected results
ProcessDescriptionMaskO2







NAOxygen Etch; Polymer Etch/Strip





















Chamber CleanProcess Chamber Chemical CleanNA40



2080040 mT

Section 8.7.1 STS AOE operator manual

Chamber CleanPlasma CleanNA50



50100092% fixed APC (~30mins)Aoest1-2.pdf
Reference Recipes
Recipe Name at the ToolDescriptionMaskFlows (sccm)



Bias (V) needs conversion

? Platen RF (Watts)

Coil (W)Pressure (mTorr)

Etch Rate (nm/min)

SiO2/mask

NA
PRCF (10), H (8), He (174)



70013503300/40
NA
a-SiCF (15), He (300)



120011507500/25
NA
SU-8CF (25), He (50)



170011008700/300
NA
SiCF (25), He (50), O (12)



150010507600/180
NA
NiCF (80), O (10)



60012006550/25
NA
AlOCF (17), SF (70)



25080030150/1.5
*** data in table based on usual etch load of 10-15%
Handbook of Silicon Based MEMS Materials and Technologies (Second Edition); Section 21.3.3.3; Table 21.4
Recipe NameEtch MaterialMaskFlows (sccm)Platen RF (Watts)Coil (W)Pressure (mTorr)Etch Rate (nm/min)
O2HeCF4C4F8H2
O2 Cleaning
NA100



10015004
SiO 1umSiO2

?PR


17428
200140041 um
SIO 3000SiO2?PR
174
10820012504

3000 A

SiOmetal maskSiO2Metal5

40
250125043000 A
SiN 1000SiN?PR
2502
8200140041000 A
SiN 2800SiN?PR
17410
8200125042800 A
SiN 4000SiN?PR4
2020
200125044000 A
SiN 1500SiN?PR
1745
8200125041500 A

quartz Lens.set

Glass?PR
155
830050043000 A
BCB.set (Benzocyclo Butene)BCB?PR2020


2508003?
STS_AOE - Instructions from Tom Lee.pdf
Recipe NameEtch MaterialMaskFlows (sccm)Platen RF (Watts)Coil (W)Pressure (mTorr)

Etch Rate (nm/min)

Quartz/mask

O2HeCF4C4F8H2

QuartzNi/Cr
10
80
30014006320 / 100:1 / 91.5 profile
STS AOE Quartz etch discussion.doc (notes on conversation with STS engineer)
Recipe NameEtch MaterialMaskFlows (sccm)Platen RF (Watts)Coil (W)Pressure (mTorr)Etch Rate (nm/min)
O2HeCF4C4F8H2
Standard Etch Rate TestSiO2


20

300600-18002