iLab Name: Plasma-Therm APEX SLR HDPCVD
iLab Kiosk: BRK Growth Core
FIC: Shared
Owner: Rich Hosler
Location: Cleanroom - R Bay
Maximum Wafer Size: 4"/100 mm

Overview

General Description

Specifications

The system has following process gases:

1. 100% Silane (SiH₄)
2. N₂
3. Ar
4. CH₄ Methane
5. O₂
6. _SF6 Sulfur Hexaflouride

Configured for 4" substrates.

• Bias Supply RF power: 600W @ 13.56MHz
• ICP RF Power: 1kW @ 2MHz
• Electrode temp range: 10-180°C ±3°C

Technology Overview 

Sample Requirements and Preparation

• All samples must be 4” wafers (bare or pocketed) or mounted onto a 4” wafer via Crystalbond or equivalent. 
• Samples and wafers must be cleaned using the TAI (Toluene, Acetone, IPA) process followed by either Piranha or RCA cleaning as appropriate for sample compatibility.

Standard Operating Procedure

TBD

Process Library

Silicon Dioxide on Si, SiC

Silicon Nitride on Si

Recipe	Precursors	Validated Substrates	Rate (Å/min)	RI (F40 measured)	Deposition Temp. Tested (°C)	Bias Power / ICP Power (W)	Pressure (mTorr)
SiO2	SiH­4 / O2 / Ar	Si and SiC	1000	1.46-1.50	178	25/900	8
SiNx	SiH4 / N2 / Ar	Si	1100	1.964-2.25	25-150	0/900	12.5
Chamber Etch	SF6 / O2 / Ar	Si & No wafer	70	n/a	178	10/1000	40

New Process Consultation: 

Plasma-Therm Technical Support (ask for process support)

E-mail: techsupport@plasmatherm.com
Phone: (800) 246-2592

References

References

• Silicon Nitride for MEMS Applications: LPCVD and PECVD Process Comparison
• DEVELOPMENT OF LOW TEMPERATURE SILICON NITRIDE AND SILICON OXIDE