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Problem Reporting Guide
Problem Reporting Guide
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StatusDOWNUP
Issue Date and Description - Pump error


Estimated Fix Date and Comment

 Will investigate morning of 12/9.


Responding StaffR. Hosler




iLab Name: Plasma-Therm APEX SLR HDPCVD
iLab Kiosk: BRK Growth Core
FIC: Shared
Owner: Rich Hosler
Location: Cleanroom - R Bay
Wafer Size: 4"/100 mm


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Overview

General Description

Fab Forum HDPCVD Presentation.pptx

Specifications

The system has following process gases:

  1. 100% Silane (SiH4)
  2. N2
  3. Ar
  4. CH4 Methane
  5. O2
  6. SF6 Sulfur Hexaflouride

Configured for 4" substrates.

  • Bias Supply RF power: 600W @ 13.56MHz
  • ICP RF Power: 1kW @ 2MHz
  • Electrode temp range: 10-180°C ±3°C


Technology Overview 

 

Sample Requirements and Preparation

  • All samples must be 4” wafers (bare or pocketed) or mounted onto a 4” wafer via Crystalbond or equivalent. 
  • Samples and wafers must be cleaned using the TAI (Toluene, Acetone, IPA) process followed by either Piranha or RCA cleaning as appropriate for sample compatibility.

Standard Operating Procedure

  • View file
    nameAPEX HDPCVD SOP_09_22_20.pdf
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Process Library

Recipe

Precursors

Validated Substrates

Rate (Å/min)

RI (F40 measured)

Deposition Temp. Tested (°C)

Bias Power / ICP Power (W)

Pressure (mTorr)

SiO2

SiH­4 / O2 / Ar

Si and SiC

1000

1.46-1.50

178

25/900

8

SiNx

SiH4 / N2 / Ar

Si

1100

1.964-2.25

25-150

0/900

12.5

Chamber Etch

SF6 / O2 / Ar

Si & No wafer

70

n/a

178

10/1000

40


New Process Consultation: 

Plasma-Therm Technical Support (ask for process support)

E-mail: techsupport@plasmatherm.com
Phone: (800) 246-2592

References

References