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iLab Name: Plasma-Therm APEX SLR HDPCVD
iLab Kiosk: BRK Growth Core
FIC: Shared
Owner: Rich Hosler
Location: Cleanroom - R Bay
Wafer Size: 4"/100 mm
Please inspect through the top window to see if any broken wafer bits are present before loading sample!
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Overview
General Description
Fab Forum HDPCVD Presentation.pptx
Specifications
The system has following process gases:
- 100% Silane (SiH4)
- N2
- Ar
- CH4 Methane
- O2
- SF6 Sulfur Hexaflouride
Configured for 4" substrates.
- Bias Supply RF power: 600W @ 13.56MHz
- ICP RF Power: 1kW @ 2MHz
- Electrode temp range: 10-180°C ±3°C
Technology Overview
Sample Requirements and Preparation
- All samples must be 4” wafers (bare or pocketed) or mounted onto a 4” wafer via Crystalbond or equivalent.
- Samples and wafers must be cleaned using the TAI (Toluene, Acetone, IPA) process followed by either Piranha or RCA cleaning as appropriate for sample compatibility.
Standard Operating Procedure
View file name APEX HDPCVD SOP_09_22_20.pdf height 250
Process Library
Recipe | Precursors | Validated Substrates | Rate (Å/min) | RI (F40 measured) | Deposition Temp. Tested (°C) | Bias Power / ICP Power (W) | Pressure (mTorr) |
SiO2 | SiH4 / O2 / Ar | Si and SiC | 1000 | 1.46-1.50 | 178 | 25/900 | 8 |
SiNx | SiH4 / N2 / Ar | Si | 1100 | 1.964-2.25 | 25-150 | 0/900 | 12.5 |
Chamber Etch | SF6 / O2 / Ar | Si & No wafer | 70 | n/a | 178 | 10/1000 | 40 |
New Process Consultation:
Plasma-Therm Technical Support (ask for process support)
E-mail: techsupport@plasmatherm.com
Phone: (800) 246-2592