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titleFeatures

The JBX-8100FS is an electron-beam lithography system designed to write nanometer to submicron sized patterns using a spot beam.

Write Modes Specifications

Note: High Throughput will be almost exclusively used, contact Bill RoweJustin Wirth if you think you need HR mode.


High Throughput
(HT/4th Lens/EOS 3)

High Resolution
(HR/5th Lens/EOS 6)

Max. Main Field Size

1000 μm x 1000 μm

100 μm x 100 μm

Max. Sub Field Size

8 μm x 8 μm

0.8 μm x 0.8 μm

Min. Beam Step Size

0.5 nm

0.05 nm

Min. Shape Placement Step

1 nm

0.1 nm

Overlay Accuracy

≤±20 nm

≤±9 nm

Field Stitching Accuracy

≤±20 nm

≤±9 nm

Min. Beam Diameter

5.1 nm

1.8 nm

Min. Line Width (Field Center)

<12 nm

<8 nm

Available Currents (at BNC)

2, 10, 30, 100 nA (200 60 nA available as a test file)

0.5 nA

Features

  • ZrO/W emitter 

  • 4-stage electron-beam focusing system

  • Accelerating voltage: 100 kV

  • Writing: Vector scan (within a subfield) and Step-and-repeat (electronically between subfields and physically between fields).

  • Beam scanning speed: ≤125 MHz

  • Scan speed modulation: 256 rank / 0.05 nsec resolution

  • Mainfield/Positioning DAC: 20-bit

  • Subfield/Scanning DAC: 14-bit

  • Focus range: ±100 μm

  • Max wafer size: 200 mm

  • Max writing area: 150 mm x 150 mm

  • Movable area: 190 mm x 170 mm

  • Stage positioning resolution: λ/1024 (~0.6 nm)

  • Beam current stability: 0.2% pp/hr

  • Beam position stability: ≤60 nm pp/hr (HT) / ≤10 nm pp/hr (HR)

  • Substrate thickness compatibility: 225 μm to 1.3 mm

  • Deflection amplitude correction and objective-lens focus correction, using the substrate height detector

  • Smallest features size: 4.2 nm (demonstrated by JEOL in Development of the JBX-8100FS Electron Beam Lithography System).

Insert excerpt
JEOL JBX-8100FS - Internal Resources - Detailed Specifications
JEOL JBX-8100FS - Internal Resources - Detailed Specifications
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The JBX-8100FS is mounted on a TMC Quiet Island with STACIS III antivibration supports. Transmission is minimized at high frequencies, and unlike older anti-vibration supports, is reduced at low (<10 Hz) frequencies as well.

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