Patterning
Overview
Optical Lithography
Heidelberg MLA150 Maskless Aligner: for mask-making or direct write photolithography
Suss MA6 Mask Aligner
Suss MJB3 UV400 Mask Aligner
Suss MJB4 UV400 Mask Aligner
Electron Beam Lithography
JEOL JBX-8100FS
100kV max beam energy
125 MHz scan speed
Resolutions down to 7nm
2 Modes:
High Throughput - 1000um Field Size
High Resolution - 100um Field Size
Cassettes for pieces: 3”, 4”, 6” wafers, 5” photomasks
GenISys Beamer software
Raith: e LiNE
30kV max beam energy
20 MHz scan speed
Resolutions down to 18nm
Standard or Ultra-flat Cassette
Up to 4” wafer
Excellent SEM imaging
Excellent for work on nanowires, graphene, carbon nanotubes
Other patterning
Nanonex NX-2000: nano-imprint lithography tool for making multiple copies of small geometry patterns
PLS6MW Laser Engraver
Photoresist Dry Film Laminator
Interference Lithography System
Laurell EDC-650 Spin Processor
Staff contact: Ron Reger
Any patterning begins with a pattern, usually in GDS or OAS. See this youtube tutorial on KLayout: https://www.youtube.com/channel/UC45cUNKyJLlRDqCsL1QZFPQ/videos