Patterning
Overview
Optical Lithography
- Heidelberg MLA150 Maskless Aligner: for mask-making or direct write photolithography
- Suss MA6 Mask Aligner
- Suss MJB3 UV400 Mask Aligner
- Suss MJB4 UV400 Mask Aligner
Electron Beam Lithography
JEOL JBX-8100FS
- 100kV max beam energy
- 125 MHz scan speed
- Resolutions down to 7nm
- 2 Modes:
- High Throughput - 1000um Field Size
- High Resolution - 100um Field Size
- Cassettes for pieces: 3”, 4”, 6” wafers, 5” photomasks
- GenISys Beamer software
Raith: e LiNE
- 30kV max beam energy
- 20 MHz scan speed
- Resolutions down to 18nm
- Standard or Ultra-flat Cassette
- Up to 4” wafer
- Excellent SEM imaging
- Excellent for work on nanowires, graphene, carbon nanotubes
Other patterning
- Nanonex NX-2000: nano-imprint lithography tool for making multiple copies of small geometry patterns
- PLS6MW Laser Engraver
- Photoresist Dry Film Laminator
- Interference Lithography System
- Laurell EDC-650 Spin Processor
Staff contact: Ron Reger
- Photomask Fabrication
- Spin Coating
- Photoresist Baking
- Optical Lithography
- Electron Beam Lithography
- Other Patterning
- Test patterns
Any patterning begins with a pattern, usually in GDS or OAS. See this youtube tutorial on KLayout: https://www.youtube.com/channel/UC45cUNKyJLlRDqCsL1QZFPQ/videos