Patterning

Patterning

Overview

Optical Lithography

  • Heidelberg MLA150 Maskless Aligner: for mask-making or direct write photolithography

  • Suss MA6 Mask Aligner

  • Suss MJB3 UV400 Mask Aligner

  • Suss MJB4 UV400 Mask Aligner


Electron Beam Lithography

JEOL JBX-8100FS

  • 100kV max beam energy

  • 125 MHz scan speed

  • Resolutions down to 7nm

  • 2 Modes:

    • High Throughput - 1000um Field Size

    • High Resolution - 100um Field Size

  • Cassettes for pieces: 3”, 4”, 6” wafers, 5” photomasks

  • GenISys Beamer software

Raith: e LiNE

  • 30kV max beam energy

  • 20 MHz scan speed

  • Resolutions down to 18nm

  • Standard or Ultra-flat Cassette

  • Up to 4” wafer

  • Excellent SEM imaging

  • Excellent for work on nanowires, graphene, carbon nanotubes


Other patterning

  • Nanonex NX-2000: nano-imprint lithography tool for making multiple copies of small geometry patterns

  • PLS6MW Laser Engraver

  • Photoresist Dry Film Laminator

  • Interference Lithography System

  • Laurell EDC-650 Spin Processor

Staff contact: Ron Reger





Any patterning begins with a pattern, usually in GDS or OAS. See this youtube tutorial on KLayout: https://www.youtube.com/channel/UC45cUNKyJLlRDqCsL1QZFPQ/videos