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Will update with ETA when I have one that is reliable. Supply output not sufficient for deposition. Sent supply and match box to vender for expedited repair. New PSU estimated ship date is 4/25.
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Plasma-Therm Apex SLR HDPCVD
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iLab Name:
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Plasma-Therm APEX SLR HDPCVD Deposition System
iLab Kiosk: BRK Growth Core
FIC: Shared
Owner: Rich Hosler
Location: Cleanroom - R Bay
Wafer Size: 4"/100 mm
Please inspect through the top window to see if any broken wafer bits are present before loading sample!
Only use recipes with "AR CLEAN" in the title on samples/wafers that are bare Silicon. The Argon clean process can etch structure and cause chamber contamination.
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Note on Carrier WafersPlease note that carrier wafers should not have gouges, debris, broken parts, or excessive deposition stress. |
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 In this example the wafer became overstressed and slightly cracked, leaving debris in the chamber which caused damage to the ceramic plate when the cleaning wafer went in. If you're unsure, send me a picture at hosler0@purdue.edu and I' |
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ll answer as quickly as possible. |
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Overview
General Description
Fab Forum HDPCVD Presentation.pptx
Specifications
The system has following process gases:
100% Silane (SiH4)
N2
Ar
CH4 Methane
O2
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SF6 Sulfur Hexaflouride
Configured for 4" substrates.
Bias Supply RF power: 600W @ 13.56MHz
ICP RF Power: 1kW @ 2MHz
Electrode temp range: 10-180°C ±3°C
Technology Overview
Sample Requirements and Preparation
All samples must be 4” wafers (bare or pocketed) or
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use a 4" carrier wafer.
Samples and wafers must be cleaned using the TAI (Toluene, Acetone, IPA) process followed by either Piranha or RCA cleaning as appropriate for sample compatibility.
Standard Operating Procedure
View file name APEX HDPCVD SOP_08_03_22.pdf
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Process Library
Recipe | Precursors | Validated Substrates | Rate (Å/min) | RI (F40 measured) | Deposition Temp. Tested (°C) | Bias Power / ICP Power (W) | Pressure (mTorr) |
SiO2 | SiH4 / O2 / Ar | Si and SiC | 1000 | 1.46-1.50 | 170 | 25/900 | 8 |
SiNx | SiH4 / N2 / Ar | Si | 1100 | 1.964-2.25 | 25-150 | 0/900 | 12.5 |
a:Si | SiH4 / N2 / Ar | Si | 600 | tbd | 150 | 80/600 | 5 |
Chamber Etch | SF6 / O2 / Ar | Sapphire Wafer | 70 | n/a | 178 | 10/1000 (750) | 40 |
New Process Consultation:
Plasma-Therm Technical Support (ask for process support)
E-mail: techsupport@plasmatherm.com
Phone: (800) 246-2592
References
References
Silicon Nitride for MEMS Applications: LPCVD and PECVD Process Comparison
DEVELOPMENT OF LOW TEMPERATURE SILICON NITRIDE AND SILICON OXIDE