Refer to the Material and Process Compatibility page for information on materials compatible with this tool.
Equipment Status: Set as UP, PROBLEM, or DOWN, and report the issue date (MM/DD) and a brief description. Italicized fields will be filled in by BNC Staff in response to issues. See Problem Reporting Guide for more info.

Status	DOWN
Issue Date and Description	08 Aug 2024 Burn box failure
Estimated Fix Date and Comment	TBD Investigating
Responding Staff	R. Hosler

iLab Growth Kiosk

iLab Furnace Kiosk

Create PECVD-TA Log Entry

View PECVD-TA Logbook

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Problem Ticket

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Axic Benchmark PECVD

iLab Name: Axic

iLab Kiosk: BRK Growth Core
FIC: Shared
Owner: R ich Hosler
Location: Cleanroom - R Bay
Maximum Wafer Size: 8"/200 mm

Notes: Axic SiO2 dep rates are a little below stated recipe values at the moment. For example the 40nm/min dep recipe is putting down about 32nm/min. I'm investigating this as time allows but just be forewarned that this is the current state.

Overview

PLEASE UTILIZE THE NEW SAFETY BAR WHEN THE CHAMBER IS OPEN. SEE THE NEW SOP FOR DETAILS

General Description

A general-purpose Capacitively Coupled Plasma (CCP) Plasma Enhanced Chemical Vapor Deposition (PECVD) system for oxide and nitride deposition.

Specifications

The system has following gases:

10% Silane (SiH₄)/balance N₂
N₂O
NH₃
CF₄
O₂
N₂

It accommodate up to 8" substrate or a variety of smaller substrate sizes.

Maximum RF power: 600W @ 13.56MHz
Maximum electrode temp: 300 C
Minimum base pressure: 20 mTorr

SOP:

Questions & Troubleshooting

What kind of quality can I expect from deposited oxide?
Below is an example of deposited PECVD oxide under AFM. Note that this was taken when the tool was initially installed, and is for illustrative purposes only: