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Axic PECVD

Axic PECVD

Status

Up

Issue Date and Description

 

Estimated Fix Date and Comment

 

Responding Staff

Guannan Chen

Axic PECVD - Internal Resources

Axic Benchmark PECVD

iLab Name: Axic

iLab Kiosk: BRK Growth Core
FIC: Shared
Owner: Guannan Chen
Location: Cleanroom - R Bay
Maximum Wafer Size: 8"/200 mm

Notes: Axic SiO2 dep rates are a little below stated recipe values at the moment. For example the 40nm/min dep recipe is putting down about 32nm/min. I'm investigating this as time allows but just be forewarned that this is the current state.

Overview

PLEASE UTILIZE THE NEW SAFETY BAR WHEN THE CHAMBER IS OPEN. SEE THE NEW SOP FOR DETAILS

General Description

A general-purpose Capacitively Coupled Plasma (CCP) Plasma Enhanced Chemical Vapor Deposition (PECVD) system for oxide and nitride deposition.

Specifications

The system has following gases:

  1. 10% Silane (SiH4)/balance N2

  2. N2O

  3. NH3

  4. CF4

  5. O2

  6. N2

It accommodate up to 8" substrate or a variety of smaller substrate sizes.

  • Maximum RF power: 600W @ 13.56MHz

  • Maximum electrode temp: 300 C

  • Minimum base pressure: 20 mTorr

SOP:

 

 

Process Library

See SOP for standard recipes, users should feel free to add their recipes here.