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Refer to the Material and Process Compatibility page for information on materials compatible with this tool.
Equipment Status: Set as UP, PROBLEM, or DOWN, and report the issue date (MM/DD) and a brief description. Italicized fields will be filled in by BNC Staff in response to issues. See Problem Reporting Guide for more info.

StatusUP
Issue Date and Description


Estimated Fix Date and Comment

Responding Staff



iLab Name: Plasma-Therm APEX SLR HDPCVD
iLab Kiosk: BRK Growth Core
FIC: Shared
Owner: Rich Hosler
Location: Cleanroom - R Bay
Wafer Size: 4"/100 mm

Overview

General Description

Fab Forum HDPCVD Presentation.pptx

Specifications

The system has following process gases:

  1. 100% Silane (SiH4)
  2. N2
  3. Ar
  4. CH4 Methane
  5. O2
  6. SF6 Sulfur Hexaflouride

Configured for 4" substrates.

  • Bias Supply RF power: 600W @ 13.56MHz
  • ICP RF Power: 1kW @ 2MHz
  • Electrode temp range: 10-180°C ±3°C


Technology Overview 

 

Sample Requirements and Preparation

  • All samples must be 4” wafers (bare or pocketed) or mounted onto a 4” wafer via Crystalbond or equivalent. 
  • Samples and wafers must be cleaned using the TAI (Toluene, Acetone, IPA) process followed by either Piranha or RCA cleaning as appropriate for sample compatibility.

Standard Operating Procedure

APEX HDPCVD SOP.docx



Process Library

Recipe

Precursors

Validated Substrates

Rate (Å/min)

RI (F40 measured)

Deposition Temp. Tested (°C)

Bias Power / ICP Power (W)

Pressure (mTorr)

SiO2

SiH­4 / O2 / Ar

Si and SiC

1000

1.46-1.50

178

25/900

8

SiNx

SiH4 / N2 / Ar

Si

1100

1.964-2.25

25-150

0/900

12.5

Chamber Etch

SF6 / O2 / Ar

Si & No wafer

70

n/a

178

10/1000

40


New Process Consultation: 

Plasma-Therm Technical Support (ask for process support)

E-mail: techsupport@plasmatherm.com
Phone: (800) 246-2592

References

References


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