Overview
General Description
Tergeo series plasma equipment are designed to generate low pressure plasma using non-toxic gases. The ions and neutral radicals generated inside the plasma source can then be used to
etch or remove a thin layer of materials from the surface of the samples placed inside the plasma chamber. It can be used to change surface energy of the samples, ash organic materials,
remove oxide from metal surface, etch silicon, silicon nitride and silicon oxide materials.
Specifications
The system provides low pressure cleaning and etching of most materials including oxides, metal surfaces, silicon, silicon nitride, SiC, diamond, III-V, II-VI materials etc.
The optimal chamber pressure is 50 to 300 mTorr. For oxygen gas, optimal pressure range is 70 - 150mTorr.
The maximum RF power is 150W and the range of MFC is 0 to 100 sccm.
There are 2 cleaning modes: direct and remote. For direct mode, plasma is generated inside the chamber and is mainly used for high speed plasma etching. In remote
cleaning, plasma is generated and confined in a remote plasma source attached to the sample chamber. This provides a gentle cleaning for delicate samples such as
optics with thin antireflective coating, gate oxides, graphene, diamond like carbon etc.
Sample Requirements and Preparation
Standard Operating Procedure
Questions & Troubleshooting
Process Library