Overview

General Description

Tergeo series plasma equipment are designed to generate low pressure plasma using non-toxic gases. The ions and neutral radicals generated inside the plasma source can then be used to etch or remove a thin layer of materials from the surface of the samples placed inside the plasma chamber. It can be used to change surface energy of the samples, ash organic materials, remove oxide from metal surface, etch silicon, silicon nitride and silicon oxide materials.

Specifications

The system provides low pressure cleaning and etching of most materials including oxides, metal surfaces, silicon, silicon nitride, SiC, diamond, III-V, II-VI materials etc.
Optimal chamber pressure: 50 - 300 mTorr. For oxygen gas, optimal pressure range is 70 - 150mTorr. 
Maximum RF power: 150W.
MFC flow range: 0 to 100 sccm.

There are 2 cleaning modes: direct and remote. For direct mode, plasma is generated inside the chamber and is mainly used for high speed plasma etching. In remote cleaning, plasma is generated and confined in a remote plasma source attached to the sample chamber. This  provides a gentle cleaning for delicate samples such as  optics with thin antireflective coating, gate oxides, graphene, diamond like carbon etc.

Sample Requirements and Preparation

Standard Operating Procedure

Questions & Troubleshooting

Process Library

References