Overview
General Description
Specifications
The JBX-8100FS is an electron-beam lithography system designed to write nanometer to submicron sized patterns using a spot beam.
Write Modes Specifications
Note: High Throughput will be almost exclusively used, contact Bill Rowe if you think you need HR mode.
High Throughput | High Resolution (HR/5th Lens/EOS 6) | |
| Max. Main Field Size | 1000 μm x 1000 μm | 100 μm x 100 μm |
| Max. Sub Field Size | 8 μm x 8 μm | 0.8 μm x 0.8 μm |
| Min. Beam Step Size | 0.5 nm | 0.05 nm |
| Min. Shape Placement Step | 1 nm | 0.1 nm |
| Overlay Accuracy | ≤±20 nm | ≤±9 nm |
| Field Stitching Accuracy | ≤±20 nm | ≤±9 nm |
| Min. Beam Diameter | 5.1 nm | 1.8 nm |
| Min. Line Width (Field Center) | <12 nm | <8 nm |
| Available Currents (at BNC) | 2, 10, 30, 100 nA (200 nA available as a test file) | 0.5 nA |
Features
- ZrO/W emitter
- 4-stage electron-beam focusing system
- Accelerating voltage: 100 kV
- Writing: Vector scan (within a subfield) and Step-and-repeat (electronically between subfields and physically between fields).
- Beam scanning speed: ≤125 MHz
- Scan speed modulation: 256 rank / 0.05 nsec resolution
- Mainfield/Positioning DAC: 20-bit
- Subfield/Scanning DAC: 14-bit
- Focus range: ±100 μm
- Max wafer size: 200 mm
- Max writing area: 150 mm x 150 mm
- Movable area: 190 mm x 170 mm
- Stage positioning resolution: λ/1024 (~0.6 nm)
- Beam current stability: 0.2% pp/hr
- Beam position stability: ≤60 nm pp/hr (HT) / ≤10 nm pp/hr (HR)
- Substrate thickness compatibility: 225 μm to 1.3 mm
- Deflection amplitude correction and objective-lens focus correction, using the substrate height detector
- Smallest features size: 4.2 nm (demonstrated by JEOL in Development of the JBX-8100FS Electron Beam Lithography System).
The JBX-8100FS is mounted on a TMC Quiet Island with STACIS III antivibration supports. Transmission is minimized at high frequencies, and unlike older anti-vibration supports, is reduced at low (<10 Hz) frequencies as well.
Sample Requirements and Preparation
Samples need to be free of outgassing contaminants, and PR must be properly baked to avoid contamination of the column
Standard Operating Procedure
Login to Confluence to view the SOP, or email jcwirth@purdue.edu if you are external to Purdue and interested:
SOP - JEOL JBX-8100FS E-Beam Writer
Process Library
Currently empty, please contribute your processes here.
8100calculator.xlsx
Use this Excel file to assist with picking currents, shot pitches, ensuring you're within the clock headroom (<125 MHz, >8ns), to roughly estimate your write time based on the current/dose/pattern area, and track alignment mark locations.
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