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2024-12-20 to 2025-01-02: Reduced Holiday Operations

Dear Birck Research Community,

The Purdue winter recess begins effective Friday afternoon December 20th and concludes Thursday morning, January 2. The university is officially closed during this time. As we have done in past years, the Birck Nanotechnology Center will remain available for research but will be unstaffed and hazardous gasses will be unavailable. Lab work may otherwise proceed, though any fume hood work must be done with someone else present in the same laboratory or cleanroom bay (the "buddy" system). Click the link above to get more detail about equipment conditions and rules.


Refer to the Material and Process Compatibility page for information on materials compatible with this tool.
Equipment Status: Set as UP, PROBLEM, or DOWN, and report the issue date (MM/DD) and a brief description. Italicized fields will be filled in by BNC Staff in response to issues. See Problem Reporting Guide for more info.

Status
Issue Date and Description

 Operating computer did not start.

Estimated Fix Date and Comment

Operating computer is at Suss Germany facility for repair. The update will be available in the week of September 13-16.

Responding StaffJoon Park / Rich Hosler


iLab Name: SB6e bonder
iLab Kiosk: BRK Lithography Core
FIC: David Janes
Owner: Mike Courtney
Location: Cleanroom - Bay N
Maximum Wafer Size: 4"/100 mm

Overview

General Description

The Suss SB6e VAC Substrate Bond Aligner is a universal tool for bonding processes for micro electro-mechanical system applications such as: Anodic Bonding (AB) Silicon Fusion Bonding (SFB) and Thermal Compression Bonding (TCB). After alignment on the BA 6 the substrate stacks are mechanically clamped using the transport fixture for further processing in the SB6e chamber.

Specifications

  • 4 inch wafer size for bonding
  • Vacuum down to 5x10-5 mbar.
  • Over pressure up to 3 bar absolute
  • Flexible process control using Windows NT with data recording and analysis
  • Optimized bonding routines can be replicated

Technology Overview


Sample Requirements and Preparation


Standard Operating Procedure


Questions & Troubleshooting



Process Library

References

Karl Suss SB6e Operator Manual (Internal Resource)

Suss Transport Fixture Service Manual (Internal Resource)


Literature References:

"Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate", D. Liang and J. E. Bowers, JVST B 26, 1560 (2008)

2024-12-20 to 2025-01-02: Reduced Holiday Operations

Dear Birck Research Community,

The Purdue winter recess begins effective Friday afternoon December 20th and concludes Thursday morning, January 2. The university is officially closed during this time. As we have done in past years, the Birck Nanotechnology Center will remain available for research but will be unstaffed and hazardous gasses will be unavailable. Lab work may otherwise proceed, though any fume hood work must be done with someone else present in the same laboratory or cleanroom bay (the "buddy" system). Click the link above to get more detail about equipment conditions and rules.


Refer to the Material and Process Compatibility page for information on materials compatible with this tool.
Equipment Status: Set as UP, PROBLEM, or DOWN, and report the issue date (MM/DD) and a brief description. Italicized fields will be filled in by BNC Staff in response to issues. See Problem Reporting Guide for more info.

StatusDOWN
Issue Date and Description

 Operating computer did not start.

Estimated Fix Date and Comment

 Sending system out for repair.

Responding StaffJoon Park / Rich Hosler


iLab Name: SB6e bonder
iLab Kiosk: BRK Lithography Core
FIC: David Janes
Owner: Mike Courtney
Location: Cleanroom - Bay N
Maximum Wafer Size: 4"/100 mm

Overview

General Description

The Suss SB6e VAC Substrate Bond Aligner is a universal tool for bonding processes for micro electro-mechanical system applications such as: Anodic Bonding (AB) Silicon Fusion Bonding (SFB) and Thermal Compression Bonding (TCB). After alignment on the BA 6 the substrate stacks are mechanically clamped using the transport fixture for further processing in the SB6e chamber.

Specifications

  • 4 inch wafer size for bonding
  • Vacuum down to 5x10-5 mbar.
  • Over pressure up to 3 bar absolute
  • Flexible process control using Windows NT with data recording and analysis
  • Optimized bonding routines can be replicated

Technology Overview


Sample Requirements and Preparation


Standard Operating Procedure


Questions & Troubleshooting



Process Library

References

Karl Suss SB6e Operator Manual (Internal Resource)

Suss Transport Fixture Service Manual (Internal Resource)


Literature References:

"Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate", D. Liang and J. E. Bowers, JVST B 26, 1560 (2008)

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