The new JEOL JBX-8100FS series spot beam lithography system is designed for higher throughput and lower operating costs. The JBX-8100FS writes ultrafine patterns at a faster rate of speed while minimizing idle time, especially during the exposure process, thus increasing throughput. This new, high precision compact e-beam tool is suitable for a wide range of applications from research to production, while its small footprint and low power consumption reduce cost of ownership.
Main Features
Small footprint The area required for the standard system is 4.9 m (W) x 3.7 m (D) x 2.6 m (H), much smaller than the conventional systems.
Low power consumption Power needed for normal operation is approximately 3 kVA, reduced to 1/3 of the conventional systems.
High throughput The system has two exposure modes, high resolution and high throughput modes, supporting different types of patterning from ultra fine processing to small to mid size production. It has minimized the idle time during exposure while increasing the maximum scanning speed by 1.25 to 2.5 times to 125 MHz (the world’s highest level) for high speed writing.
Version The JBX-8100FS is available in 2 versions: G1 (entry model) and G2 (full option model). Optional accessories can be added to the G1 model as needed.
New Functions An optional optical microscope is available to enable examination of patterns on the sample without exposing resist to light. A signal tower is provided as standard for visual monitoring of system operation.
Laser positioning resolution Stage positions are measured and controlled in 0.6 nm steps as standard, and in 0.15 nm steps with an optional upgrade.
System control Versatile Linux® operating system combined with a new graphic user interface provides ease in operation. The data preparation program supports both Linux® and Windows®.
Specifications
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title
Features
The JBX-8100FS is an electron-beam lithography system designed to write nanometer to submicron sized patterns using a spot beam.
Write Modes Specifications
Note: High Throughput will be almost exclusively used, contact Bill Roweif you think you need HR mode.
High Throughput (HT/4th Lens/EOS 3)
High Resolution (HR/5th Lens/EOS 6)
Max. Main Field Size
1000 μm x 1000 μm
100 μm x 100 μm
Max. Sub Field Size
8 μm x 8 μm
0.8 μm x 0.8 μm
Min. Beam Step Size
0.5 nm
0.05 nm
Min. Shape Placement Step
1 nm
0.1 nm
Overlay Accuracy
≤±20 nm
≤±9 nm
Field Stitching Accuracy
≤±20 nm
≤±9 nm
Min. Beam Diameter
5.1 nm
1.8 nm
Min. Line Width (Field Center)
<12 nm
<8 nm
Available Currents (at BNC)
2, 10, 30, 100 nA (200 nA available as a test file)
0.5 nA
Features
ZrO/W emitter
4-stage electron-beam focusing system
Accelerating voltage: 100 kV
Writing: Vector scan (within a subfield) and Step-and-repeat (electronically between subfields and physically between fields).
The JBX-8100FS is mounted on a TMC Quiet Island with STACIS III antivibration supports. Transmission is minimized at high frequencies, and unlike older anti-vibration supports, is reduced at low (<10 Hz) frequencies as well.
Sample Requirements and Preparation
Samples need to be free of outgassing contaminants, and PR must be properly baked to avoid contamination of the column
Currently empty, please contribute your processes here.
8100calculator.xlsx
Use this Excel file to assist with picking currents, shot pitches, ensuring you're within the clock headroom (<125 MHz, >8ns), to roughly estimate your write time based on the current/dose/pattern area, and track alignment mark locations.
Contact Justin Wirth if you are interested in partnering with BNC to evaluate these resists and develop standard processes of broad usefulness to the BNC research community.
