The JBX-8100FS is an electron-beam lithography system designed to write nanometer to submicron sized patterns using a spot beam.
Write Modes Specifications
Note: High Throughput will be almost exclusively used, contact Bill Rowe if you think you need HR mode.
| High Throughput (HT/4th Lens/EOS 3) | High Resolution (HR/5th Lens/EOS 6) |
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Max. Main Field Size | 1000 μm x 1000 μm | 100 μm x 100 μm |
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Max. Sub Field Size | 8 μm x 8 μm | 0.8 μm x 0.8 μm |
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Min. Beam Step Size | 0.5 nm | 0.05 nm |
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Min. Shape Placement Step | 1 nm | 0.1 nm |
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Overlay Accuracy | ≤±20 nm | ≤±9 nm |
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Field Stitching Accuracy | ≤±20 nm | ≤±9 nm |
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Min. Beam Diameter | 5.1 nm | 1.8 nm |
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Min. Line Width (Field Center) | <12 nm | <8 nm |
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Available Currents (at BNC) | 2, 10, 30, 100 nA (200 nA available as a test file) | 0.5 nA |
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Features
ZrO/W emitter
4-stage electron-beam focusing system
Accelerating voltage: 100 kV
Writing: Vector scan (within a subfield) and Step-and-repeat (electronically between subfields and physically between fields).
Beam scanning speed: ≤125 MHz
Scan speed modulation: 256 rank / 0.05 nsec resolution
Mainfield/Positioning DAC: 20-bit
Subfield/Scanning DAC: 14-bit
Focus range: ±100 μm
Max wafer size: 200 mm
Max writing area: 150 mm x 150 mm
Movable area: 190 mm x 170 mm
Stage positioning resolution: λ/1024 (~0.6 nm)
Beam current stability: 0.2% pp/hr
Beam position stability: ≤60 nm pp/hr (HT) / ≤10 nm pp/hr (HR)
Substrate thickness compatibility: 225 μm to 1.3 mm
Deflection amplitude correction and objective-lens focus correction, using the substrate height detector
Smallest features size: 4.2 nm (demonstrated by JEOL in Development of the JBX-8100FS Electron Beam Lithography System).
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The JBX-8100FS is mounted on a TMC Quiet Island with STACIS III antivibration supports. Transmission is minimized at high frequencies, and unlike older anti-vibration supports, is reduced at low (<10 Hz) frequencies as well.