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2024-12-20 to 2025-01-02: Reduced Holiday Operations

Dear Birck Research Community,

The Purdue winter recess begins effective Friday afternoon December 20th and concludes Thursday morning, January 2. The university is officially closed during this time. As we have done in past years, the Birck Nanotechnology Center will remain available for research but will be unstaffed and hazardous gasses will be unavailable. Lab work may otherwise proceed, though any fume hood work must be done with someone else present in the same laboratory or cleanroom bay (the "buddy" system). Click the link above to get more detail about equipment conditions and rules.


Refer to the Material and Process Compatibility page for information on materials compatible with this tool.
Equipment Status: Set as UP, PROBLEM, or DOWN, and report the issue date (MM/DD) and a brief description. Italicized fields will be filled in by BNC Staff in response to issues. See Problem Reporting Guide for more info.

Status

DOWN

Issue Date and Description

 Extended electrical shutdown necessary for JEOL 2 install

Estimated Fix Date and Comment

 System should be available and calibrated by 5 PM.

Responding Staff

Wirth, Justin C 

iLab Name

JEOL JBX-8100FS E-Beam Writer

iLab Kiosk

BRK Lithography Core

FIC

Shared

Owner

Bill Rowe and Justin Wirth (Email, Chat)

Location

BRK 2100P

Max. Wafer

6"/150 mm

Info Links

SOP/wiki/spaces/BNCWiki/pages/6232822 | /wiki/spaces/BNCWiki/pages/6232164

Overview

General Description

 Click here to expand...

The new JEOL JBX-8100FS series spot beam lithography system is designed for higher throughput and lower operating costs. The JBX-8100FS writes ultrafine patterns at a faster rate of speed while minimizing idle time, especially during the exposure process, thus increasing throughput. This new, high precision compact e-beam tool is suitable for a wide range of applications from research to production, while its small footprint and low power consumption reduce cost of ownership.

Main Features

  • Small footprint
    The area required for the standard system is 4.9 m (W) x 3.7 m (D) x 2.6 m (H), much smaller than the conventional systems.

  • Low power consumption
    Power needed for normal operation is approximately 3 kVA, reduced to 1/3 of the conventional systems.

  • High throughput
    The system has two exposure modes, high resolution and high throughput modes, supporting different types of patterning from ultra fine processing to small to mid size production. It has minimized the idle time during exposure while increasing the maximum scanning speed by 1.25 to 2.5 times to 125 MHz (the world’s highest level) for high speed writing.

  • Version
    The JBX-8100FS is available in 2 versions: G1 (entry model) and G2 (full option model). Optional accessories can be added to the G1 model as needed.

  • New Functions
    An optional optical microscope is available to enable examination of patterns on the sample without exposing resist to light. A signal tower is provided as standard for visual monitoring of system operation.

  • Laser positioning resolution
    Stage positions are measured and controlled in 0.6 nm steps as standard, and in 0.15 nm steps with an optional upgrade.

  • System control
    Versatile Linux® operating system combined with a new graphic user interface provides ease in operation. The data preparation program supports both Linux® and Windows®.

Specifications

 Features

The JBX-8100FS is an electron-beam lithography system designed to write nanometer to submicron sized patterns using a spot beam.

Write Modes Specifications

Note: High Throughput will be almost exclusively used, contact Bill Rowe if you think you need HR mode.


High Throughput
(HT/4th Lens/EOS 3)

High Resolution
(HR/5th Lens/EOS 6)

Max. Main Field Size

1000 μm x 1000 μm

100 μm x 100 μm

Max. Sub Field Size

8 μm x 8 μm

0.8 μm x 0.8 μm

Min. Beam Step Size

0.5 nm

0.05 nm

Min. Shape Placement Step

1 nm

0.1 nm

Overlay Accuracy

≤±20 nm

≤±9 nm

Field Stitching Accuracy

≤±20 nm

≤±9 nm

Min. Beam Diameter

5.1 nm

1.8 nm

Min. Line Width (Field Center)

<12 nm

<8 nm

Available Currents (at BNC)

2, 10, 30, 100 nA (200 nA available as a test file)

0.5 nA

Features

  • ZrO/W emitter 

  • 4-stage electron-beam focusing system

  • Accelerating voltage: 100 kV

  • Writing: Vector scan (within a subfield) and Step-and-repeat (electronically between subfields and physically between fields).

  • Beam scanning speed: ≤125 MHz

  • Scan speed modulation: 256 rank / 0.05 nsec resolution

  • Mainfield/Positioning DAC: 20-bit

  • Subfield/Scanning DAC: 14-bit

  • Focus range: ±100 μm

  • Max wafer size: 200 mm

  • Max writing area: 150 mm x 150 mm

  • Movable area: 190 mm x 170 mm

  • Stage positioning resolution: λ/1024 (~0.6 nm)

  • Beam current stability: 0.2% pp/hr

  • Beam position stability: ≤60 nm pp/hr (HT) / ≤10 nm pp/hr (HR)

  • Substrate thickness compatibility: 225 μm to 1.3 mm

  • Deflection amplitude correction and objective-lens focus correction, using the substrate height detector

  • Smallest features size: 4.2 nm (demonstrated by JEOL in Development of the JBX-8100FS Electron Beam Lithography System).

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The JBX-8100FS is mounted on a TMC Quiet Island with STACIS III antivibration supports. Transmission is minimized at high frequencies, and unlike older anti-vibration supports, is reduced at low (<10 Hz) frequencies as well.

Sample Requirements and Preparation

Samples need to be free of outgassing contaminants, and PR must be properly baked to avoid contamination of the column

Standard Operating Procedure

SOP - JEOL JBX-8100FS E-Beam Writer

Process Control Information

 2 nA

Process Library

Currently empty, please contribute your processes here.

8100calculator.xlsx

Use this Excel file to assist with picking currents, shot pitches, ensuring you're within the clock headroom (<125 MHz, >8ns), to roughly estimate your write time based on the current/dose/pattern area, and track alignment mark locations.

8100calculator.xlsx

 Kiosk Links


iLab Kiosk

eLog: Submit

eLog: View/Edit

Report Problem


 Login to view link

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References

BNC Staff Presentations - Internal Resources

J. C. Wirth, "Introduction to the JEOL JBX-8100FS", BNC Faculty Seminar, 2/08/2018 (Updated 10/25/2018).

Purdue's JBX-8100FS, from JEOL - Internal Resources

JEOL Manuals - Internal Resources

 Click here to expand...

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General References

Relevant Literature

 Click here to expand...

Partnership Opportunities - Alternate EBL Resists/Processes

 Click here to expand...

Contact Justin Wirth if you are interested in partnering with BNC to evaluate these resists and develop standard processes of broad usefulness to the BNC research community. 

AZ nLOF 2000

AllResist

AR-P 6200 and AR-N 7520 are of particular interest:

FAQ: E-Beam Resists

AR-P 6200:

Nanostructures

Developer Comparison

High Contrast Developer


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