The JBX-8100FS is an electron-beam lithography system designed to write nanometer to submicron sized patterns using a spot beam.

Write Modes Specifications

Note: High Throughput will be almost exclusively used, contact Bill RoweJustin Wirth if you think you need HR mode.

Features

• ZrO/W emitter 

• 4-stage electron-beam focusing system

• Accelerating voltage: 100 kV

• Writing: Vector scan (within a subfield) and Step-and-repeat (electronically between subfields and physically between fields).

• Beam scanning speed: ≤125 MHz

• Scan speed modulation: 256 rank / 0.05 nsec resolution

• Mainfield/Positioning DAC: 20-bit

• Subfield/Scanning DAC: 14-bit

• Focus range: ±100 μm

• Max wafer size: 200 mm

• Max writing area: 150 mm x 150 mm

• Movable area: 190 mm x 170 mm

• Stage positioning resolution: λ/1024 (~0.6 nm)

• Beam current stability: 0.2% pp/hr

• Beam position stability: ≤60 nm pp/hr (HT) / ≤10 nm pp/hr (HR)

• Substrate thickness compatibility: 225 μm to 1.3 mm

• Deflection amplitude correction and objective-lens focus correction, using the substrate height detector

• Smallest features size: 4.2 nm (demonstrated by JEOL in Development of the JBX-8100FS Electron Beam Lithography System).

The JBX-8100FS is mounted on a TMC Quiet Island with STACIS III antivibration supports. Transmission is minimized at high frequencies, and unlike older anti-vibration supports, is reduced at low (<10 Hz) frequencies as well.