Overview

PLEASE UTILIZE THE NEW SAFETY BAR WHEN THE CHAMBER IS OPEN. SEE THE NEW SOP FOR DETAILS

General Description

A general-purpose Capacitively Coupled Plasma (CCP) Plasma Enhanced Chemical Vapor Deposition (PECVD) system for oxide and nitride deposition.

Specifications

The system has following gases:

1. 10% Silane (SiH₄)/balance N₂
2. N₂O
3. NH₃
4. CF₄
5. O₂
6. N₂

It accommodate up to 8" substrate or a variety of smaller substrate sizes.

• Maximum RF power: 600W @ 13.56MHz
• Maximum electrode temp: 300 C
• Minimum base pressure: 20 mTorr

Technology Overview 

Sample Requirements and Preparation

SOP:

Questions & Troubleshooting

What kind of quality can I expect from deposited oxide?
Below is an example of deposited PECVD oxide under AFM. Note that this was taken when the tool was initially installed, and is for illustrative purposes only:

Process Library

See SOP for standard recipes, users should feel free to add their recipes here.

References

Jean-Luc Umwungeri - ECE 696 Final Report: Detailed Study of SiN PECVD (Internal Resource)

Jean-Luc Umwungeri - ECE 696 Final Report, Supplemental Information (Internal Resource)

Manufacturer Website

PECVD Trends and Troubleshooting - Oxford Instruments (Internal Resource)

Growth and Characterization of Silicon-Based Dielectrics using Plasma Enhanced Chemical Vapor Deposition - Daniel J. Carbaugh, MS Thesis, University of Ohio (2014).

The above varies recipes for a tool identical to ours.