1 Rate Types
2 Lab Access Charges
3 Equipment Rates
4 Staff Time Charges
5 Notes
6 Birck Laboratory Stocked Supplies (subject to change without notice)

Birck Nanotechnology Center Recharge Rates.

Effective June 1, 2023.

Rate Types

INT: Internal (Subsidized)

ENP: External Non‐Profit, Academic, Governmental, and Indiana Small Business

EFP: External For‐Profit

Facilities and Administrative (F&A) costs are included in listed external prices.

Lab Access Charges

Entering BRK labs incurs daily charges to pay for consumables and staff support.

The Birck Lab Fee is charged for any day of lab entry into any BRK lab/galley.
An additional surcharge also applies depending on the type of lab.
If labs of different types are entered, multiple surcharges may be incurred.

Each fee/surcharge is daily: charged up to once per calendar day, per user, regardless of the number of entries or different labs of that type entered.

Monthly Lab Access Cap (Internal Users): Lab fees/surcharges are subsidized by BNC after paying 15 days per month (per user, per account, per fee/surcharge).

Access Charge	Applies to...	INT	ENP	EFP

Access Charge	Applies to...	INT	ENP	EFP
Birck Lab Fee	Daily entry to any BRK lab/galley	14	44	51
Bio Lab Surcharge	BSL1/2 labs: BRK 1081, 2077	9	20	23
Cleanroom Surcharge	BRK 2100A	28	53	61
Gen Lab Surcharge	Any stocked lab/galley not BSL1/2 or BRK 2100A	2	4	5

Equipment Rates

Rates are $ hourly unless specified otherwise in the service name. Hourly billed tools are billed in time step increments depending on the particular tool. Check iLab or contact the staff in charge of the tool for more information.
"C ‐ " indicates services eligible for Scifres Equipment Cap for internal users.
Precious metals are charged at market prices plus applicable markups and overhead charges.

Equipment	INT	ENP	EFP

Equipment	INT	ENP	EFP
C ‐ Deposition, ALD (4200001865)	19	37	42
C ‐ Fiji200 ALD	19	37	42
C - Veeco Fiji G3 Atomic Layer Deposition Tool	19	37	42
C ‐ Deposition, CVD (4200001866)	45	89	102
C ‐ 2D CVD	45	89	102
C ‐ Axic	45	89	102
C ‐ EasyTube 3000	45	89	102
C ‐ Epigress	45	89	102
C ‐ Parylene CVD Furnace	45	89	102
C ‐ Plasma-Therm Apex SLR HDPCVD Deposition System	45	89	102
C ‐ Tube 02 Nitride Dep	45	89	102
C ‐ Tube 03 LTO Dep	45	89	102
C ‐ Tube 06 Polysilicon	45	89	102
C ‐ Tube 9 TEOS Deposition	45	89	102
C ‐ Deposition, Flex Compatible PVD, Per Run (4200001862)	161	308	354
C ‐ Lesker E‐Beam Evaporator ‐ Flexible Substrate Compatible (Per Run)	161	308	354
C ‐ PVD Sputtering System ‐ Flexible Substrate Compatible (Per Run)	161	308	354
C ‐ Deposition, PVD and Electroplating, Per Run (4200001863)	117	229	263
C ‐ CHA E‐Beam Evaporator #1 (Per Run)	117	229	263
C ‐ CHA E‐Beam Evaporator #2 (Per Run)	117	229	263
C ‐ Iko Electroplating System (Per Run)	117	229	263
C ‐ Lesker E‐Beam Evaporator (Per Run)	117	229	263
C ‐ PVD E‐Beam Evaporator ‐ Glancing Angle Deposition (GLAD) (Per Run)	117	229	263
C ‐ PVD E‐Beam Evaporator ‐ Metal/Magnetic Sources (Per Run)	117	229	263
C ‐ PVD Sputtering System ‐ 4 Target Magnetic Sources (Per Run)	117	229	263
C ‐ PVD Sputtering System ‐ 6 Target Magnetic Sources (Per Run)	117	229	263
C ‐ PVD Sputtering System ‐ Metal/Dielectric Sources (Per Run)	117	229	263
C ‐ PVD Sputtering System ‐ Nitride (Per Run)	117	229	263
C ‐ WAFAB Electroplating (Per Run)	117	229	263
C ‐ Etching, General (4200001857)	20	40	46
C ‐ PIE Scientific Tergeo-Plus Plasma Cleaner 1	20	40	46
C ‐ March Jupiter II	20	40	46
C ‐ March Jupiter III	20	40	46
C ‐ Xactix E1 Xenon Difluoride (XeF2) Etcher	20	40	46
C ‐ Etching, ICP (4200001856)	60	116	133
C ‐ AJA Ion Mill - 6”	60	116	133
C ‐ AJA Ion Mill - 8”	60	116	133
C ‐ Panasonic E620 ICP RIE Etcher	60	116	133
C ‐ Plasma-Therm Apex SLR ICP RIE Etcher	60	116	133
C - Plasma-Therm Versaline DSE Deep Silicon Etcher	60	116	133
C ‐ STS ASE 2	60	116	133
C ‐ Furnace, Oxidation/Annealing (4200001867)	23	43	49
C ‐ Blue M Furnace	23	43	49
C ‐ Jipelec RTA	23	43	49
C ‐ Nitric Oxide Anneal	23	43	49
C ‐ Nitrogen Anneal Furnace	23	43	49
C ‐ RCA Hood	23	43	49
C ‐ Tube 01 Clean Ox	23	43	49
C ‐ Tube 04 Field Ox	23	43	49
C ‐ Tube 05 Anneal	23	43	49
C ‐ Tube 7 General Oxidation	23	43	49
C ‐ Tube 8 High Temperature Anneal	23	43	49
C ‐ Lithography, Aligners (4200001860)	46	115	132
C ‐ 557 MJB3 Aligners	46	115	132
C ‐ Heidelberg MLA150 Maskless Aligner	46	115	132
C ‐ MA6	46	115	132
C ‐ MJB3_1	46	115	132
C ‐ MJB3_2	46	115	132
C ‐ MJB4	46	115	132
C ‐ Nanonex NX‐2000	46	115	132
C ‐ SB6e bonder	46	115	132
C ‐ Lithography, E‐Beam, 100 kV (4200001858)	92	238	273
C ‐ JEOL JBX‐8100FS E‐Beam Writer #1	92	238	273
C ‐ JEOL JBX‐8100FS E‐Beam Writer #2	92	238	273
C ‐ Lithography, Spinners (4200001859)	21	44	50
C ‐ Laurell EDC‐650 Spin Processor	21	44	50
C ‐ SCS 6808P Spinner #2	21	44	50
C ‐ SCS G3P‐8 Spinner #1	21	44	50
C ‐ Spinner3	21	44	50
C ‐ Spinner4	21	44	50
C ‐ Metrology, General (4200001864)	26	51	59
C ‐ Alpha‐Step	26	51	59
C ‐ Bruker GT‐K	26	51	59
C ‐ Cleanroom Ellipsometer	26	51	59
C ‐ DI3100 BRK1265	26	51	59
C ‐ Filmetrics F10‐RT	26	51	59
C ‐ Filmetrics F40‐UV	26	51	59
C - Filmetrics F54-XY	26	51	59
C ‐ JEOL JCM 5000 Neoscope SEM	26	51	59
C ‐ Keyence VHX‐6000 Digital Microscope	26	51	59
C - Keyence VHX-7000 Digital Microscope + EA-300 Elemental Analyzer	26	51	59
C - Keyence VK-X3000 Surface Profiler	26	51	59
C ‐ KLA‐Tencor P‐10 Profilometer	26	51	59
C - KLA P-17 Profilometer	26	51	59
C ‐ Leica DCM8 Confocal Microscope	26	51	59
C - Leica DM8000 M Optical Microscope	26	51	59
C ‐ Nanoman AFM	26	51	59
C ‐ Nikon Eclipse L150 Microscope 1 (N Bay)	26	51	59
C ‐ Nikon Eclipse L150 Microscope 2 (N Bay)	26	51	59
C ‐ Olympus BX‐60 Microscope (J Bay)	26	51	59
C ‐ Olympus Microscope	26	51	59
C ‐ P‐7 Profilometer	26	51	59
C ‐ Park NX20 AFM	26	51	59
C ‐ Stress Machine	26	51	59
C - Woollam M-2000 Ellipsometer	26	51	59
Characterization, LDV (4200001842)	26	41	47
Polytec Laser Vibrometer	26	41	47
Suss PLV50 ProbeStation	26	41	47
Characterization, Probe Station (4200001836)	27	51	59
Cleanroom Probe 1