2025-05-05 to 2025-05-23: Semi-Annual Facility Preventive Maintenance

Refer to the Material and Process Compatibility page for information on materials compatible with this tool.
Equipment Status: Set as UP, PROBLEM, or DOWN, and report the issue date (MM/DD) and a brief description. Italicized fields will be filled in by BNC Staff in response to issues. See Problem Reporting Guide for more info.

Status	UP
Issue Date and Description
Estimated Fix Date and Comment
Responding Staff

iLab Name: Epigress
iLab Kiosk: BRK Growth Core
FIC: Michael Capano
Owner: Dallas Morisette
Location: BRK 2221
Maximum Wafer Size: 2"/50 mm or 6"/150 mm

Overview

General Description

• Metal Organic Chemical Vapor Deposition system for growing Silicon Carbide and Graphene.
• Capable of p and n type growth.

Specifications

• Grows single crystal on pieces up to six inch wafers.
• No metals are allowed in this system.
• Growth temperatures from 1100 C to 1650 C

Technology Overview 

Sample Requirements and Preparation

Silicon Carbide, Si

Standard Operating Procedure

Questions & Troubleshooting

Process Library

References