2024-12-20 to 2025-01-02: Reduced Holiday Operations

Dear Birck Research Community,

The Purdue winter recess begins effective Friday afternoon December 20th and concludes Thursday morning, January 2. The university is officially closed during this time. As we have done in past years, the Birck Nanotechnology Center will remain available for research but will be unstaffed and hazardous gasses will be unavailable. Lab work may otherwise proceed, though any fume hood work must be done with someone else present in the same laboratory or cleanroom bay (the "buddy" system). Click the link above to get more detail about equipment conditions and rules.

Refer to the Material and Process Compatibility page for information on materials compatible with this tool.
Equipment Status: Set as UP, PROBLEM, or DOWN, and report the issue date (MM/DD) and a brief description. Italicized fields will be filled in by BNC Staff in response to issues. See Problem Reporting Guide for more info.

Status	UP
Issue Date and Description
Estimated Fix Date and Comment
Responding Staff

iLab Name: Epigress
iLab Kiosk: BRK Growth Core
FIC: Michael Capano
Owner: Dallas Morisette
Location: BRK 2221
Maximum Wafer Size: 2"/50 mm or 6"/150 mm

Overview

General Description

Metal Organic Chemical Vapor Deposition system for growing Silicon Carbide and Graphene.
Capable of p and n type growth.

Specifications

Grows single crystal on pieces up to six inch wafers.
No metals are allowed in this system.
Growth temperatures from 1100 C to 1650 C

Technology Overview

Sample Requirements and Preparation

Silicon Carbide, Si

Standard Operating Procedure

Questions & Troubleshooting

Birck Nanotechnology Center Wiki

Epigress