CHA E-Beam Evaporator #2


2024-12-20 to 2025-01-02: Reduced Holiday Operations

Dear Birck Research Community,

The Purdue winter recess begins effective Friday afternoon December 20th and concludes Thursday morning, January 2. The university is officially closed during this time. As we have done in past years, the Birck Nanotechnology Center will remain available for research but will be unstaffed and hazardous gasses will be unavailable. Lab work may otherwise proceed, though any fume hood work must be done with someone else present in the same laboratory or cleanroom bay (the "buddy" system). Click the link above to get more detail about equipment conditions and rules.


Refer to the Material and Process Compatibility page for information on materials compatible with this tool.
Equipment Status: Set as UP, PROBLEM, or DOWN, and report the issue date (MM/DD) and a brief description. Italicized fields will be filled in by BNC Staff in response to issues. See Problem Reporting Guide for more info.

StatusDOWN
Issue Date and Description
10/31/2024 Cryo pump has failed for an unknown reason, potentially faulty repair.  Cryo will be sent out
Estimated Fix Date and Comment
Contingent on shipping and repair timeline, estimated 3-4 weeks
Responding StaffDave Lubelski/Dan Witter

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iLab NameC - CHA E-Beam Evaporator #2
iLab KioskBRK Evaporation Sputtering Core
FICShared
OwnerDave Lubelski
LocationCleanroom - L Bay
Max. Wafer4"/100 mm
Internal Page
Staff Page/wiki/spaces/BNCWiki/pages/62391762


Current SourcesTi, Ag, Ni, Au, Pt, NiCr
Potential SourcesTi, Au, Pt, Al, Ni, Ge, Cr, Ag, NiCr (80/20)

Overview

General Description

General Description

  • Telemark  861 deposition controller
  • Six pocket e-beam evaporator
  • Pockets hold 8.2 cc crucible liners
  • Substrate fixture can hold 1- 6" wafer  4"  wafers with adapters for a 3" wafer, 2" wafer, and fragments of wafers
  • Water cooled stage

Specifications

  • Source Materials: Ti, Au, Al, Ni, Ge, Ag
  • Deposition rates range from 1 - 8.0 Angstroms/sec
  • Quick pump down to 5x10-7 torr
     

        RESULTS FROM TOOL CHARACTERIZATION  AS OF 1/24/2020

material deposited on clean pattered wafer deposition ratethickness settingcharacterized result
using PR  lift off process measured on P7


CHA2


Ti2 a/s50 nm49.9 nm
Au2 a/s50 nm49.4nm
Ni2 a/s50 nm48.3 nm
Pt2 a/s50 nm51 nm
Ag2 a/s50 nm48.8 nm
Ge2 a/s50 nm49.8 nm
Ti1 a/s5 nm5nm
Ti/AuTi 1 a/s  Au 2/as5 nm Ti  50nm Au54.8nm

 


Sample Requirements and Preparation

        Make sure your sample has been properly Baked when using PR or PMMA.  

        Substrates must be solvent cleaned in the standard 3 step Toluene, Acetone, and IPA solvent clean.

Samples must be cleaned in accordance to processing needs     NO FLEXIBLE SUBSTRATES OF ANY KIND ARE ALLOWED IN THIS TOOL


Standard Operating Procedure


Please Note: This instrument is billed per use based on a 2 hour reservation block

  • Example: One user only uses the tool per reservation.  When you vent the system and unload your sample that concludes your reservation.  
  • Example: If the usage is 10 minutes past the initial 2 hour reservation, you will be billed for 2 uses




Questions & Troubleshooting

 I had a problem with the way the last  samples turned out. It looked like there were almost pin holes or something. I am not sure if you know what may have been wrong but I can show you the samples and maybe you have an idea of what caused it. 

 

The pinholes are most likely caused by contaminates on the substrate , below are some more comments K.S.

Dr A. Kumar

Harcourt Butler Technological Institute

 Dear Dr. Sivagami

Deposit the film at higher vacuum than what you are using at present. For good adhesion, Degass the substrates before deposition. Make slightly thicker films. Anneal them after evaporation in vacuum at higher temperatures for getting rid of voids. See if you are able to solve the problem. Substrate cleaning can also be improved for better uniformity. Good luck.

Dr A. Kumar

Harcourt Butler Technological Institute

If substrates are glass plates, degassing is done by putting a heater inside the coating unit over the substrates and heat them up to 200 degree centigrade for about two hours in vacuum. The gasses absorbed comes out in this process. Switch off the heater to cool down to room temperature. Thereafter, deposit the film without exposing them to air.

Pradip Kumar Dey

Added an answer

pinholes are mainly created due to any foreign material already present in the substrate and they tries to come out through the deposited films during deposition.  Clean your substrate thoroughly in piranha solution (1:1 ratio of H2O2 and H2SO4 for 20 min. ** you can search in net for details) . Thereafter rinse in DI water and preheat in oven @ 150 deg. Cent. for at least 30 min and then place in thermal chamber for deposition. Also you should heat your substrate up to 150 deg. cent. just before deposition. For better film quality high vacuum is essential

Reed Schmell

Independent Researcher

Pinholes are either caused by surface contamination remaining on the "cleaned" surface. Use the water break test to determine if the surface is residue free. You will see interference fringes as it dries. The fringes will be even as the water evaporates. Any island fringes or streaks means the surface is not clean. Any of these particles actually become nucleation sites as the coating is deposited



References