CHA E-Beam Evaporator #2

CHA E-Beam Evaporator #2



Status

Down

Issue Date and Description

2/26/2026 High voltage interlocks do not function

Estimated Fix Date and Comment

Dan is sourcing replacement interlocks - ETA not yet known

Responding Staff

Dave Lubelski/Dan Witter/Ethan Zhang




iLab Name

C - CHA E-Beam Evaporator #2

iLab Kiosk

BRK Evaporation Sputtering Core

FIC

Shared

Owner

Dave Lubelski

Location

Cleanroom - L Bay

Max. Wafer

4"/100 mm

Internal Page



Staff Page

Staff - CHA E-Beam Evaporator #2



Current Sources

Ti, Ag, Ni, Au, Pt, Ge

Potential Sources

Ti, Au, Pt, Al, Ni, Ge, Cr, Ag, NiCr (80/20)

Overview

General Description

General Description

  • Telemark  861 deposition controller

  • Six pocket e-beam evaporator

  • Pockets hold 8.2 cc crucible liners

  • Substrate fixture can hold 1- 6" wafer  4"  wafers with adapters for a 3" wafer, 2" wafer, and fragments of wafers

  • Water cooled stage

Specifications

  • Source Materials: Ti, Au, Al, Ni, Ge, Ag

  • Deposition rates range from 1 - 4.0 Angstroms/sec

  • Quick pump down to 5x10-7 torr
     

        RESULTS FROM TOOL CHARACTERIZATION  AS OF 1/24/2020

material deposited on clean pattered wafer 

deposition rate

thickness setting

characterized result

using PR  lift off process measured on P7







CHA2







Ti

2 a/s

50 nm

49.9 nm

Au

2 a/s

50 nm

49.4nm

Ni

2 a/s

50 nm

48.3 nm

Pt

2 a/s

50 nm

51 nm

Ag

2 a/s

50 nm

48.8 nm

Ge

2 a/s

50 nm

49.8 nm

Ti

1 a/s

5 nm

5nm

Ti/Au

Ti 1 a/s  Au 2/as

5 nm Ti  50nm Au

54.8nm

 



Sample Requirements and Preparation

        Make sure your sample has been properly Baked when using PR or PMMA.  

        Substrates must be solvent cleaned in the standard 3 step Toluene, Acetone, and IPA solvent clean.

Samples must be cleaned in accordance to processing needs     NO FLEXIBLE SUBSTRATES OF ANY KIND ARE ALLOWED IN THIS TOOL