For use in Acid Hoods

Acids

• Acetic Acid
• Buffered Oxide Etch (6:1 HF with NH4F buffer)
• CR14S Chromium etch
• Hydrochloric Acid
• Nanostrip 2x
• Nitric Acid
• Phosphoric Acid
• Sulfuric Acid
• Hydroflouric Acid

Concentrated Bases

• Ammonium Hydroxide
• Tetramethlyammonium hydroxide

Oxidizers

• Hydrogen Peroxide

For use in Solvent Hoods

Solvents

• Chlorobenzene
• HMDS
• PRS 2000 (NMP mixture)
• Remover PG (99% NMP)
• Xylene
• Acetone
• Isopropanol
• Methanol
• Toluene
• MIBK/IPA 1:3
• SU-8 Developer (PGMEA)

For use in Lithography Hoods (Solvent Hoods with Sinks and Yellow Light)

May use chemicals for use in Solvent Hoods, EXCEPT PRS 2000 or Remover PG, plus:

Non-Concentrated Basic Developers

• AZ Developer
  • Na based for high selectivity with DNQ photoresists, main appeal is lack of Al etch
• AZ 340
  • Na based, needs custom dilution, with higher dilutions for thinner resists to improve process control, and lower dilutions to improve development rate.
• AZ 400K
  • 1.4 N Buffered KOH used in 1:4 dilution, buffered with potassium borate. Recommended for thick resists
• MF-26A
  • 0.26N TMAH w/ Polyglycol surfactant

Photoresists

• AZ1518
• AZ9260

E-Beam Resists

• HSQ
• 950 PMMA A4
• AR-P 6200.13

Common Additional Lithography Chemicals (Non-stocked)

• S1800 series
  • PGMEA + Novolak & DNQ
• SPR 220
  • Thick positive resist, Anisole + Ethyl lactate
• ZEP
  • Anisole + Methylstyrene & Methyl Alpha-Chloroacrylate. AR-P 6200 is chemically identical
• LOR 3A
  • Lift off resist, Cyclopentanone + PGME
• MCC Primer 80/20
  • HMDS + PGMEA
• SU-8