For use in Acid Hoods

Acids

• Acetic Acid

• Buffered Oxide Etch (6:1 HF with NH4F buffer)

• CR14S Chromium etch

• Hydrochloric Acid

• Nanostrip 2x

• Nitric Acid

• Phosphoric Acid

• Sulfuric Acid

• Hydroflouric Acid

Concentrated Bases

• Ammonium Hydroxide

• Tetramethlyammonium hydroxide

Oxidizers

• Hydrogen Peroxide

For use in Solvent Hoods

Solvents

• Chlorobenzene

• HMDS

• PRS 2000 (NMP mixture)

• Remover PG (99% NMP)

• Xylene

• Acetone

• Isopropanol

• Methanol

• Toluene

• MIBK/IPA 1:3

• SU-8 Developer (PGMEA)

For use in Lithography Hoods (Solvent Hoods with Sinks and Yellow Light)

May use chemicals for use in Solvent Hoods, EXCEPT PRS 2000 or Remover PG, plus:

Non-Concentrated Basic Developers

• AZ Developer

  • Na based for high selectivity with DNQ photoresists, main appeal is lack of Al etch

• AZ 340

  • Na based, needs custom dilution, with higher dilutions for thinner resists to improve process control, and lower dilutions to improve development rate.

• AZ 400K

  • 1.4 N Buffered KOH used in 1:4 dilution, buffered with potassium borate. Recommended for thick resists

• MF-26A

  • 0.26N TMAH w/ Polyglycol surfactant

Photoresists

• AZ1518

• AZ9260

E-Beam Resists

• HSQ

• 950 PMMA A4

• AR-P 6200.13

Common Additional Lithography Chemicals (Non-stocked)

• S1800 series

  • PGMEA + Novolak & DNQ

• SPR 220

  • Thick positive resist, Anisole + Ethyl lactate

• ZEP

  • Anisole + Methylstyrene & Methyl Alpha-Chloroacrylate. AR-P 6200 is chemically identical

• LOR 3A

  • Lift off resist, Cyclopentanone + PGME

• MCC Primer 80/20

  • HMDS + PGMEA

• SU-8