PVD Pulsed Laser Deposition (PLD) System
Overview
General Description
Versatile pulsed laser deposition system dedicated to oxides Manufacturer: PVD Products, Inc.
Specifications
- Samples up to 2” diameter wafers
- Max substrate temperature
- sapphire = 800°C
- silicon = 900°C
- heating via IR lamps
- Targets
- three 2” dia. x 0.25” thick target holders
- smaller target sizes possible
- current available targets: Ag, Al, Co, Cr, Cu, Fe, Ga, In, Mo, Sc, Ta, Ti, V, W, Zr
- Gases: O2
- Laser source
- Lambda Physik 305i KrF excimer laser (see manual below)
- Laser rastering
- uniform rastering across target via rotation and mirror
- Chamber
- loadlock
- base pressure <810-8 Torr
Technology Overview
Non-outgassing materials.
Sample Requirements and Preparation
Standard Operating Procedure
Questions & Troubleshooting
Process Library