GaN MBE
Overview
General Description
The RIBER 2000 Molecular Beam Epitaxy (MBE) System is capable of growing on 2" substrates. This MBE features a Load Lock chamber, Reflective High Energy Electron Diffraction (RHEED) and automation software. Sources include nitrogen plasma, Ga, In, Al, and Si for doping.
Specifications
Check with Michael Manfra This tool has restricted use policies. However samples and structures can be considered for fabrication on an individual basis.
Technology Overview
This tool has restricted use policies. However samples and structures can be considered for fabrication on an individual basis.
Sample Requirements and Preparation
Standard Operating Procedure
Questions & Troubleshooting
Process Library
References