Optical Lithography

  • Heidelberg MLA150 Maskless Aligner: for mask-making or direct write photolithography
  • Suss MA6 Mask Aligner
  • Suss MJB3 UV400 Mask Aligner
  • Suss MJB4 UV400 Mask Aligner

Electron Beam Lithography


  • 100kV max beam energy
  • 125 MHz scan speed
  • Resolutions down to 7nm
  • 2 Modes:
    • High Throughput - 1000um Field Size
    • High Resolution - 100um Field Size
  • Cassettes for pieces: 3”, 4”, 6” wafers, 5” photomasks
  • GenISys Beamer software

Raith: e LiNE

  • 30kV max beam energy
  • 20 MHz scan speed
  • Resolutions down to 18nm
  • Standard or Ultra-flat Cassette
  • Up to 4” wafer
  • Excellent SEM imaging
  • Excellent for work on nanowires, graphene, carbon nanotubes

Other patterning

  • Nanonex NX-2000: nano-imprint lithography tool for making multiple copies of small geometry patterns
  • PLS6MW Laser Engraver
  • Photoresist Dry Film Laminator
  • Interference Lithography System
  • Laurell EDC-650 Spin Processor

Staff contact: Ron Reger

Any patterning begins with a pattern, usually in GDS or OAS. See this youtube tutorial on KLayout: