PVD Sputtering System - 4 Target Magnetic Sources
Status | UP |
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Issue Date and Description |
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Estimated Fix Date and Comment |
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Responding Staff | Ethan Zhang |
iLab Name | |
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iLab Kiosk | |
FIC | Joerg Appenzeller |
Owner | |
Location | Cleanroom - S Bay |
Max. Wafer | 4"/100 mm |
Current Sources | Co20Fe60B (at%), MgO, Ru, Ta |
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Potential Sources | Al, Al₂O₃, Co20Fe60B(at%), Cr, Cu, Ge, ITO, MgO, Mo, MoSi₂, Nb, Nb70Ti30(wt%), Ni, Ni/Ti, NiFe, Ru, Si, Si₃N₄, SiO₂, Ta, Ti, TiN, TiO₂, W, W₃Si₄ |
Overview
General Description
The system which has the annealing capability (up to 400C).
The system can be used for sputtering magnetic-related materials.
The system can do reactive sputteing (N2, O2).
More materials are allowed to be sputtered using this tool, but the deposition rate has not been characterized. The rate will be measured based on the user's needs.
Specifications
DC/RF sputtering system, Base pressure of ~10^(-7) torr, reactive sputtering capable, heated stage capable of 400C.
SOPs