PVD Sputtering System - Nitride
Overview
General Description
- Versatile sputtering system for the deposition of metals and nitrides
- Manufacturer: PVD Products, Inc.
Specifications
- samples up to 2” diameter wafers
- max substrate temperature
- sapphire = 800°C
- silicon = 900°C
- targets
- four 2” magnetron sputter sources
- current available targets: Ag, Al, Co, Cr, Cu, Fe, Fe-Al, Ga, In, Mo, Sc, Ta, TaN, Ti, TiN, V, W, Zr, ZrN
- gases: Ar, N2, NH3
- power supplies
- three 500W DC power supplies
- one 13.54 MHz, 300W RF power supply
- chamber
- loadlock
- base pressure <8x10-8 Torr
- two quartz crystal monitors for in-situ thickness measurement
Technology Overview
Sample Requirements and Preparation
Standard Operating Procedure
Questions & Troubleshooting
Process Library