Overview

General Description

• Versatile sputtering system for the deposition of metals and nitrides

• Manufacturer: PVD Products, Inc.

Specifications

• samples up to 2” diameter wafers

• max substrate temperature

  • sapphire = 800°C

  • silicon = 900°C

• targets

  • four 2” magnetron sputter sources

  • current available targets: Ag, Al, Co, Cr, Cu, Fe, Fe-Al, Ga, In, Mo, Sc, Ta, TaN, Ti, TiN, V, W, Zr, ZrN

• gases: Ar, N2, NH3

• power supplies

  • three 500W DC power supplies

  • one 13.54 MHz, 300W RF power supply

• chamber

  • loadlock

  • base pressure <8x10-8 Torr

  • two quartz crystal monitors for in-situ thickness measurement

Technology Overview 

Sample Requirements and Preparation

Standard Operating Procedure

Questions & Troubleshooting

Process Library

References