Overview

General Description

• Versatile sputtering system for the deposition of metals and nitrides
• Manufacturer: PVD Products, Inc.

Specifications

• samples up to 2” diameter wafers
• max substrate temperature
  • sapphire = 800°C
  • silicon = 900°C
• targets
  • four 2” magnetron sputter sources
  • current available targets: Ag, Al, Co, Cr, Cu, Fe, Fe-Al, Ga, In, Mo, Sc, Ta, TaN, Ti, TiN, V, W, Zr, ZrN
• gases: Ar, N2, NH3
• power supplies
  • three 500W DC power supplies
  • one 13.54 MHz, 300W RF power supply
• chamber
  • loadlock
  • base pressure <8x10-8 Torr
  • two quartz crystal monitors for in-situ thickness measurement

Technology Overview 

Sample Requirements and Preparation

Standard Operating Procedure

Questions & Troubleshooting

Process Library

References