PVD Sputtering System - Nitride

Owned by Former user (Deleted)
Last updated: Jan 28, 2022 by Hosler, Richard S
1 min read


Refer to the Material and Process Compatibility page for information on materials compatible with this tool.
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iLab NamePVD Sputtering System - Nitride
iLab KioskBRK Evaporation Sputtering Core
FICVlad Shalaev
OwnerDave Lubelski
LocationBRK 1217
Max. Wafer2"/50 mm

Overview

General Description

  • Versatile sputtering system for the deposition of metals and nitrides
  • Manufacturer: PVD Products, Inc.

Specifications

  • samples up to 2” diameter wafers
  • max substrate temperature
    • sapphire = 800°C
    • silicon = 900°C
  • targets
    • four 2” magnetron sputter sources
    • current available targets: Ag, Al, Co, Cr, Cu, Fe, Fe-Al, Ga, In, Mo, Sc, Ta, TaN, Ti, TiN, V, W, Zr, ZrN
  • gases: Ar, N2, NH3
  • power supplies
    • three 500W DC power supplies
    • one 13.54 MHz, 300W RF power supply
  • chamber
    • loadlock
    • base pressure <8x10-8 Torr
    • two quartz crystal monitors for in-situ thickness measurement

Technology Overview 


Sample Requirements and Preparation


Standard Operating Procedure


Questions & Troubleshooting



Process Library

References