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Hitachi S-4800 Field Emission SEM

Hitachi S-4800 Field Emission SEM

Apr 17, 2025

                                                                                                                                                                                 

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iLab Name: Hitachi S-4800 Field Emission SEM
iLab Kiosk: Purdue Electron Microscopy Center
FIC: Zhongxia Shang
Owner: Christopher Gilpin
Location: BRK 1235
Maximum Wafer Size: 4"/100 mm

Overview

General Description

The S-4800 Cold Field Emission SEM combines the outstanding high-resolution performance capabilities to offer superb resolution of ~ 2.0 nm at 30 kV.  The equipment is equipped with a EDX detector for the detection of chemical elements on your sample at higher voltages.

Specifications

  • Accelerating voltages are from 500 V to 30 kV

  • Resolution ~ 2.0 nm at 30 kV

  • A choice of specimen stage: 4", 2" and 1" wafer and cross section

  • An objective lens design with "Super ExB Filter" technology. The Super ExB Filter collects and separates the various components of pure SE, compositional SE and BSE electron signals.

  • A specimen stage for large sample applications with 110mm x 110mm stage movement and computer controlled 5 axes motorization with graphical interface software.

  • New Super ExB Filter Technology

  • EDX and STEM detectors

  • 200mm Specimen Diameter

  • 5 Axis Motorized Eucentric Stage

  • Advanced Dry Vacuum System

Technology Overview

Hitachi S-4800 is an electron beam microscope, that accelerates an electron beam in a vacuum environment to interact electrons with the sample of interest.

Sample Requirements and Preparation

Samples should be conductive to optimize sample imaging. With conductive samples features of 10nm can be observed with 5kV. Nonconductive samples can still be imaged, but not small features, limiting smallest resolutions to hundreds of nm, even microns, at low beam voltages (1-5kV). Non-conductive samples can become conductive if they are coated with Carbon, Au-Pd, or Pt.

Standard Operating Procedure

QUICK GUIDE–Complete Guide in Computer desktop

  • Fill SEM w Nitrogen 1 or 2 times if empty

  • Load Sample at specific height

  • Turn On Small screen

  • Click AIR

    • Open chamber manually

    • Mount sample in Post

      • Unlock knob, Mount sample, then Lock knob

  • Close the chamber

  • Press EVAC

  • Open software PCSEM

  • Make sure stage is in EXC (Exchange) position

  • Click OPEN button

    • Insert post, Unlock, Remove Post, Hold Post

    • Press CLOSE button

    • Move stage to HME (Home) position

    • Flash (if necessary)

    • Turn Beam On

    • Find spot, adjust L/H magnification, scanning dwell time, focusing, stigmation, and alignment

    • Save image with Picture Icon

    • Turn Off beam

    • Move stage to EXC position

    • Open Chamber

    • Put Post in

    • In Unlock, Lock Sample, Pull post out

    • Close Door

    • Click Air

    • Open Exchange Chamber

    • Remove your sample

    • Close chamber

    • Click EVAC

Questions 

How should my sample be mounted?

   Make sure your sample is below the maximum height (exchange chamber height), and the screw is not below the holder base.

How to avoid charging in my sample?

   Reduce the beam current/spot size used or make your sample conductive by applying a conductive coating (C, Au/Pd, or Pt).

What beam current and beam voltage should I use? 

   The answer to this question depends on your sample and what you want to learn about it.  Here is a general introduction into the impacts of beam current and beam voltage: Optimizing SEM Parameters

FOR FURTHER QUESTIONS, PLEASE CONTACT THE ELECTRON MICROSCOPY STAFF. WE ARE ALWAYS WILLING TO HELP!

Troubleshooting

If the computer freezes, you can restart it by pressing Ctrl+Alt+Del for 10 seconds.

Be careful when loading your sample through the Exchange Chamber. Make sure the sample is mounted correctly.

If there is a problem with the beam or SEM, please contact the Electron Microscopy Staff.

References

  • Inkson, B. J. "Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) for materials characterization." Materials characterization using nondestructive evaluation (NDE) methods. Woodhead Publishing, 2016. 17-43.

  • Sharma, Surender Kumar, et al., eds. Handbook of Materials Characterization. Springer International Publishing, 2018.

  • Reimer, Ludwig. Scanning electron microscopy: physics of image formation and microanalysis. Vol. 45. Springer, 2013.

 

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